IRF740A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g TO-220AB requirement Available Improved gate, avalanche, and dynamic dV/dt ruggedness G Fully characterized capacitance and avalanche voltage and current S Effective C specified D oss G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are PRODUCT SUMMARY RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. V (V) 400 DS Please see the information / tables in this datasheet for details R ()V = 10 V 0.55 DS(on) GS APPLICATIONS Q (Max.) (nC) 36 g Switch mode power supply (SMPS) Q (nC) 9.9 gs Uninterruptable power supply Q (nC) 16 gd High speed power switching Configuration Single TYPICAL SMPS TOPOLOGIES Single transistor flyback Xfmr. reset Single transistor forward Xfmr. reset (both for US line inpu t only) ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF740APbF IRF740APbF-BE3 Lead (Pb)-free and halogen-free ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 400 DS V Gate-source voltage V 30 GS T = 25 C 10 C Continuous drain current V at 10 V I GS D T = 100 C 6.3 A C a Pulsed drain current I 40 DM Linear derating factor 1.0 W/C b Single pulse avalanche energy E 630 mJ AS a Repetitive avalanche current I 10 A AR a Repetitive avalanche energy E 12.5 mJ AR Maximum power dissipation T = 25 C P 125 W C D c Peak diode recovery dV/dt dV/dt 5.9 V/ns Operating junction and storage temperature range T , T - 55 to + 150 J stg C d d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 12.6 mH, R = 25 , I = 10 A (see fig. 12) DD J g AS c. I 10 A, dV/dt 330 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0853-Rev. D, 16-Aug-2021 Document Number: 91051 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF740A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 400 - - DS GS D V V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.48 - DS DS J D V/C Gate-source threshold voltage V V = V , I = 250 A 2.0 - V GS(th) DS GS D 4.0 Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 6.0 A - - 0.55 DS(on) GS D b Forward transconductance g V = 50 V, I = 6.0 A 4.9 - - S fs DS D Dynamic Input capacitance C - 1030 - iss V = 0 V, GS Output capacitance C -1V = 25 V, 70- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -7.7- rss pF = 0 V, V = 1.0 V, f = 1.0 MHz - 1490 - V GS DS Output capacitance C oss V = 0 V, V = 320 V, f = 1.0 MHz - 52 - GS DS Effective output capacitance C V = 0 V, V = 0 V to 320 V - 61 - oss GS DS Total gate charge Q -- 36 g I = 10 A, V = 320 V, D DS Gate-source charge Q --V = 10 V 9.9 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --16 gd Turn-on delay time t -10 - d(on) Rise time t -35 - r V = 200 V, I = 10 A, DD D ns b Turn-off delay time t -2R = 10 , R = 19.5 , see fig. 104- d(off) g D Fall time t -22- f Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 10 S showing the A G integral reverse a Pulsed diode forward current I -- 40 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 10 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 240 360 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -1.9 2.9 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0853-Rev. D, 16-Aug-2021 Document Number: 91051 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000