IRF830A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g TO-220AB Available requirement Improved gate, avalanche and dynamic dV/dt Available ruggedness G Fully characterized capacitance and avalanche voltage and current Effective C specified oss S D Material categorization: for definitions of compliance G S please see www.vishay.com/doc 99912 N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details V (V) 500 DS APPLICATIONS R ()V = 10 V 1.4 DS(on) GS Switch mode power supply (SMPS) Q max. (nC) 24 g Uninterruptable power supply Q (nC) 6.3 gs High speed power Switching Q (nC) 11 gd TYPICAL SMPS TOPOLOGIES Configuration Single Two transistor forward Half bridge Full bridge ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF830APbF Lead (Pb)-free and halogen-free IRF830APbF-BE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 5.0 C Continuous drain current V at 10 V I GS D T = 100 C 3.2 A C a Pulsed drain current I 20 DM Linear derating factor 0.59 W/C b Single pulse avalanche energy E 230 mJ AS a Repetitive avalanche current I 5.0 A AR a Repetitive avalanche energy E 7.4 mJ AR Maximum power dissipation T = 25 C P 74 W C D c Peak diode recovery dV/dt dV/dt 5.3 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 18 mH, R = 25 , I = 5.0 A (see fig. 12) J g AS c. I 5.0 A, dI/dt 370 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0852-Rev. D, 16-Aug-2021 Document Number: 91061 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF830A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.60 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.5 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 3.0 A -- 1.4 DS(on) GS D b Forward transconductance g V = 50 V, I = 3.0 A 2.8 - - S fs DS D Dynamic Input capacitance C -620 - iss V = 0 V, GS Output capacitance C -9V = 25 V, 3- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer capacitance C -4.3- rss pF Output capacitance C V = 0 V V = 1.0 V, f = 1.0 MHz 886 oss GS DS Output capacitance C V = 0 V V = 400 V, f = 1.0 MHz 27 oss GS DS c Effective output capacitance C eff. V = 0 V V = 0 V to 400 V 39 oss GS DS Total gate charge Q -- 24 g I = 5.0 A, V = 400 V, D DS Gate-source charge Q --V = 10 V 6.3 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --11 gd Turn-on delay time t -10 - d(on) Rise time t -21 - r V = 250 V, I = 5.0 A, DD D ns b R = 14 , R = 49 , see fig. 10 g D Turn-off delay time t -21- d(off) Fall time t -15- f Gate input resistance R f = 1 MHz, open drain 1.7 - 10.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 5.0 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 20 SM S b Body diode voltage V T = 25 C, I = 5.0 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 430 650 ns rr b T = 25 C, I = 5.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 1.62 2.4 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss oss DS DS S21-0852-Rev. D, 16-Aug-2021 Document Number: 91061 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000