About IGBT Modules

On Semiconductor IGBT Modules

IGBT Modules are electronic devices that utilize metal oxide semiconductor field-effect transistors (MOSFETs) as the switching element. This type of device is an efficient way to switch large currents with high frequency. IGBTs combine the properties of both bipolar transistors and field effect transistors, resulting in high power and high speed switching capabilities that make them a popular choice for applications that require high power in a small space. For example, these devices are often used in motor control and power conversion applications. Additionally, one of the main benefits of IGBT Modules is their ability to reduce electromagnetic interference while still providing excellent power efficiency.
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Enter Qty ProductConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationMaximum Operating TemperatureMinimum Operating TemperaturePackagingPd - Power DissipationPackage / CaseQualification
  
                 
NXH300B100H4Q2F2SG


IGBT Modules Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode
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USD 211.3923

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NXH300B100H4Q2F2SG-R


IGBT Modules MASS MARKET 250KW 1500V Q2 3 LEVEL BOOST
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USD 274.8239

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Si/SiC Hybrid ModulesTriple1 kV1.8 V73 A400 nA + 175 C- 40 CTray194 WPIM - 53 
NXH450B100H4Q2F2PG-R


IGBT Modules 1000V,75A FSIII IGBT, MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS
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USD 286.3802

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Si/SiC Hybrid ModulesTriple1 kV1.7 V101 A800 nA + 150 C- 40 CTray234 WPIM - 56 
NXH350N100H4Q2F2S1G


IGBT Modules Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Solder pins
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USD 289.1882

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NXH350N100H4Q2F2S1G-R


IGBT Modules GEN1.5 1500V MASS MARKET
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USD 325.0682

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IGBT Silicon Modules 1 kV1.75 V303 A  + 150 C- 40 CTray731 WQ2PACK - 42 
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