About IGBT Transistors

Alpha & Omega IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AOT10B65M1


Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
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USD 0.812
Multiples of: 1

  1.6 V   75 W         
AOT5B65M1


Transistor: IGBT; 650V; 5A; 42W; TO220; Eoff: 0.07mJ; Eon: 0.08mJ
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USD 0.924
Multiples of: 1

  1.57 V   42 W         
AOTF10B65M1


Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ
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Alpha & Omega Availability : 0
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USD 1.05
Multiples of: 1

  1.6 V   12 W         
AOTF10B65M2


Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ
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USD 1.064
Multiples of: 1

  1.6 V   12 W         
AOT10B65M2


Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 1.106
Multiples of: 1

  1.6 V   75 W         
AOTF15B60D2


Transistor: IGBT; 600V; 15A; 16.7W; TO220F; Eoff: 0.07mJ; Eon: 0.26mJ
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USD 1.12
Multiples of: 1

  1.53 V   16.7 W         
AOTF15B65M3


Transistor: IGBT; 650V; 15A; 12W; TO220F; Eoff: 0.19mJ; Eon: 0.28mJ
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USD 1.12
Multiples of: 1

  1.95 V   12 W         
AOT15B65M1


Transistor: IGBT; 650V; 15A; 107W; TO220; Eoff: 0.2mJ; Eon: 0.29mJ
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USD 1.442
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  1.7 V   107 W         
AOT20B65M1


Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ
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USD 1.573
Multiples of: 1

  1.7 V   114 W         
AOTF20B65M2


Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.28mJ; Eon: 0.58mJ
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USD 1.68
Multiples of: 1

  1.7 V   18 W         
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