About IGBT Transistors

Alpha & Omega IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AOTF15B65M2


Transistor: IGBT; 650V; 15A; 14W; TO220F; Eoff: 0.2mJ; Eon: 0.29mJ
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USD 1.932
Multiples of: 1

  1.7 V   14 W         
AOK20B135E1


Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ
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USD 2.154
Multiples of: 1

  2.2 V   125 W         
AOK20B65M2


Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
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Alpha & Omega Availability : 0
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USD 2.282
Multiples of: 1

  1.7 V   114 W         
AOK60B65H2AL


Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ
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USD 2.301
Multiples of: 1

  1.95 V   166 W         
AOK20B65M1


Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
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USD 2.31
Multiples of: 1

  1.7 V   114 W         
AOK20B120E1


Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
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USD 2.408
Multiples of: 1

  1.68 V   167 W         
AOK20B120E2


Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
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USD 2.604
Multiples of: 1

  1.75 V   125 W         
AOK20B135D1


Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
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USD 2.6691
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  1.57 V   170 W         
AOK30B65M2


Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
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USD 2.814
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  1.66 V   150 W         
AOK40B65M3


Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.5mJ; Eon: 1.3mJ
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USD 3.094
Multiples of: 1

  1.95 V   150 W         
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