About IGBT Transistors

Basic Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
BGH50N65HS1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
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USD 10.5854

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      357 W   Trench, Field Stop, SiC SBD     
BGH75N65ZF1


Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

BASiC Semiconductor Availability : 29
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USD 10.4546

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      405 W   Trench, Field Stop, SiC SBD     
BGH50N65ZF1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Icon ROHS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

BASiC Semiconductor Availability : 25
Ship by Fri. 02 Aug to Thu. 08 Aug Calender.png

USD 9.4732

Multiples of: 1

      357 W   Trench, Field Stop, SiC SBD     
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