About IGBT Transistors

Junshine IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
KWFFP10R12NS3


IGBTs ROHS
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JUNSHINE 22
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USD 19.5164
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KWMFP40R12NS3


IGBTs ROHS
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JUNSHINE 7
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USD 40.358
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KWGFP25R12NS3


IGBTs ROHS
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JUNSHINE 4
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USD 32.4433
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KWRFF40R12SWM


IGBTs ROHS
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JUNSHINE 2
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USD 17.1517
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KWRFF100R12SWM


IGBTs ROHS
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JUNSHINE 1
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USD 28.6669
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KWBW60N65F4EG


TO-247-3 IGBTs ROHS
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JUNSHINE 1
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USD 1.8933
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KWBW40N120F4EG


IGBTs TO-247 RoHS
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USD 2.4426
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KWRFF50R12SWM


313W 100A 1.2kV IGBT Modules - IGBTs ROHS
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USD 21.2369
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KWFFP15R12NS3


IGBTs L5 RoHS
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JUNSHINE 0
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USD 22.3744
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KWRFF75R12SWM


IGBTs ROHS
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JUNSHINE 0
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USD 27.3865
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