X-On Electronics has gained recognition as a prominent supplier of KWRFF50R12SWM IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. KWRFF50R12SWM IGBT Transistors are a product manufactured by JUNSHINE. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

KWRFF50R12SWM JUNSHINE

Name: KWRFF50R12SWM
Brand: JUNSHINE
SKU: KWRFF50R12SWM_JUNSHINE
Availability: OutOfStock
Rating: 5 (11 reviews)

KWRFF50R12SWM electronic component of JUNSHINE

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See Product Specifications

Part No.	KWRFF50R12SWM
Manufacturer:	JUNSHINE
Category:	IGBT Transistors
Description:	313W 100A 1.2kV IGBT Modules - IGBTs ROHS
Datasheet:	KWRFF50R12SWM Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 25.2144 ea
Line Total: USD 25.21

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

KWRFF50R12SWM More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 09 Dec to Thu. 12 Dec MOQ : 1 Multiples : 1	1 : USD 25.2144 10 : USD 24.2759 30 : USD 22.6522 100 : USD 21.2369

Specifications

Manufacturer JUNSHINE JUNSHINE
Product Category IGBT Transistors IGBT Transistors
Category IGBT Transistors IGBT Transistors
Rohs y y
Package M1 M1
Brand Category Junshine Junshine
Turn Off Delay Time Tdoff 228ns 228ns
Power Dissipation Pd 313 W 313 W
Operating Temperature - 40 C ~ + 150 C @ (Tj) - 40 C ~ + 150 C @ (Tj)
Turn On Delay Time Tdon 67ns 67ns
Collector Current Ic 100 A 100 A
Collector-Emitter Breakdown Voltage Vces 1.2 kV 1.2 kV
Type IGBT Modules IGBT Modules
Gate-Emitter Threshold Voltage Vgeth@Ic 6.1 V @2 mA 6.1 V @2 mA
Total Gate Charge Qg@Ic Vge 427 nC @50A , 15V 427 nC @50A , 15V
Collector-Emitter Saturation Voltage Vcesat@Ic Vge 1.7 V @50A , 15 V 1.7 V @50A , 15 V
Diode Reverse Recovery Time Trr 185ns 185ns
Turn Off Switching Loss Eoff 4mJ 4mJ
Turn On Switching Loss Eon 25mJ 25mJ
Collector Cut-Off Current Ices@Vce 2 mA @1.2kV 2 mA @1.2kV
Input Capacitance Cies@Vce 5.731 nF @25V 5.731 nF @25V
Diode Forward Voltage Vf@If 1.9 V @40A 1.9 V @40A
Pulsed Collector Current Icm 100 A 100 A

We are delighted to provide the KWRFF50R12SWM from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KWRFF50R12SWM and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

KWRFF50R12SWM is a 313W, 100A, 1.2kV IGBT Module manufactured by Junshine. It features an insulated gate bipolar transistor (IGBT) that has been designed and manufactured to be RoHS compliant. This module has a mid-voltage design to facilitate higher operating voltage and improved system efficiency. It has a higher efficiency rating, improved drive performance, and lower power loss than other modules of the same size. The KWRFF50R12SWM offers superior gate switching capability and improved avalanche energy leveling to ensure reliable switching in any application. It is suitable for a variety of high-power motor control applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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