X-On Electronics has gained recognition as a prominent supplier of HGTG12N60C3D IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. HGTG12N60C3D IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

HGTG12N60C3D ON Semiconductor

HGTG12N60C3D electronic component of ON Semiconductor
HGTG12N60C3D ON Semiconductor
HGTG12N60C3D IGBT Transistors
HGTG12N60C3D  Semiconductors

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See Product Specifications
Part No. HGTG12N60C3D
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 12A; 104W; TO247
Datasheet: HGTG12N60C3D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 40
Multiples : 1
40 : USD 1.6445
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MOQ : 76
Multiples : 76
76 : USD 4.5877
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Multiples : 450
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MOQ : 1
Multiples : 1
1 : USD 9.3205
10 : USD 6.1969
25 : USD 6.0164
100 : USD 5.2844
450 : USD 4.7229
900 : USD 4.5926
2700 : USD 4.4622
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MOQ : 1
Multiples : 1
1 : USD 8.9998
3 : USD 6.5561
7 : USD 6.1882
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MOQ : 450
Multiples : 450
450 : USD 4.4813
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MOQ : 2
Multiples : 1
2 : USD 5.2933
25 : USD 4.9426
50 : USD 4.8438
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MOQ : 3
Multiples : 30
3 : USD 3.8789
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Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Pulsed Collector Current
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
Gate Charge
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HGTG12N60C3D from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HGTG12N60C3D and other electronic components in the IGBT Transistors category and beyond.

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DATA SHEET www.onsemi.com UFS Series N-Channel IGBT C with Anti-Parallel Hyperfast Diode G 24 A, 600 V E E HGTG12N60C3D C G The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The much TO2473LD SHORT LEAD lower onstate voltage drop varies only moderately between 25C and CASE 340CK 150C. The IGBT used is the development type TA49123. The diode JEDEC STYLE used in anti parallel with the IGBT is the development type TA49061. This IGBT is ideal for many high voltage switching applications MARKING DIAGRAM operating at moderate frequencies where low conduction losses are essential Formerly Developmental Type TA49117. Features Y&Z&3&K 24 A, 600 V at T = 25C C G12N60C3D Typical Fall Time 210 ns at T = 150C J Short Circuit Rating Low Conduction Loss Hyperfast AntiParallel Diode This is a PbFree Device Y = onsemi Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code G12N60C3D = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: September, 2021 Rev. 3 HGTG12N60C3D/DHGTG12N60C3D ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified) C Parameter Symbol HGTG12N60C3D Unit Collector to Emitter Voltage BV 600 V CES Collector Current Continuous I 24 A At T = 25C C25 C I 12 A At T = 110C C110 C Average Diode Forward Current at 110C I 15 A (AVG) Collector Current Pulsed (Note 1) I 96 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C SSOA 24 A at 600 V J Power Dissipation Total at T = 25C P 104 W C D Power Dissipation Derating T > 25C 0.83 W/C C Operating and Storage Junction Temperature Range T , T 40 to 150 C J STG Maximum Lead Temperature for Soldering T 260 C L Short Circuit Withstand Time (Note 2) at V = 15 V t 4 s GE SC Short Circuit Withstand Time (Note 2) at V = 10 V t 13 s GE SC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V = 360 V, T =125C, R = 25 CE(PK) J G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) C Parameter Symbol Test Condition Min Typ Max Unit Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0 V 600 V CES C GE Collector to Emitter Leakage Current I V = BV T = 25C 250 A CES CE CES C V = BV T = 150C 2.0 mA CE CES C Collector to Emitter Saturation Voltage V I = I , V = 15 V T = 25C 1.65 2.0 V CE(SAT) C C110 GE C T = 150C 1.85 2.2 V C I = 15 A, V = 15 V T = 25C 1.80 2.2 V C GE C T = 150C 2.0 2.4 V C Gate to Emitter Threshold Voltage V I = 250 A, V = V T = 25C 3.0 5.0 6.0 V GE(TH) C CE GE C Gate to Emitter Leakage Current I V = 20 V 100 nA GES GE Switching SOA SSOA T = 150C, V = 15 V, V = 480 V 80 A J GE CE(PK) R = 25 , L = 100 H G V = 600 V 24 A CE(PK) Gate to Emitter Plateau Voltage V I = I , V = 0.5 BV 7.6 V GEP C C110 CE CES OnState Gate Charge Q I = I , V = 15 V 48 55 nC G(ON) C C110 GE V = 0.5 BV CE CES V = 20 V 62 71 nC GE Current TurnOn Delay Time t T = 150C, 14 ns d(ON)I J I = I , CE C110 Current Rise Time t 16 ns rI V = 0.8 BV , CE(PK) CES V = 15 V, GE Current TurnOff Delay Time t 270 400 ns d(OFF)I R = 25 , G L = 100 H Current Fall Time t 210 275 ns fI TurnOn Energy E 380 J ON TurnOff Energy (Note 3) E 900 J OFF Diode Forward Voltage V I = 12 A 1.7 2.0 V EC EC www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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