HGTG18N120BN Data Sheet August 2014 Features 1200 V NPT IGBT 26 A, 1200 V, T = 110C HGTG18N120BN is based on Non- Punch Through (NPT) IGBT C designs. The IGBT is ideal for many high voltage switching Low Saturation Voltage: V (sat) = 2.45 V I = 18 A CE C applications operating at moderate frequencies where low Typical Fall Time . . . . . . . . . . . . . 140ns at T = 150C J conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. Short Circuit Rating Low Conduction Loss Formerly Developmental Type TA49304. Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER PACKAGE BRAND HGTG18N120BND TO-247 18N120BND NOTE: When ordering, use the entire part number. G Symbol TO-247 C E 2001 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com HGTG18N120BN Rev. C1HGTG18N120BN o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C Ratings UNIT Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV 1200 V CES Collector Current Continuous o At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 54 A C C25 o At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 26 A C C110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 160 A CM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V 20 V GES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 30 V GEM o Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 100A at 1200V J o Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 390 W C D o o Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/ C C Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E 125 mJ AV o Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T -55 to 150 C J STG o Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 260 C L Short Circuit Withstand Time (Note 3) at V = 15 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t 8 s GE SC Short Circuit Withstand Time (Note 3) at V = 12 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t 15 s GE SC CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. o 2. I = 25 A, L = 40H, T = 25 C CE J o 3. V = 960 V, T = 125 C, R 3 . CE(PK) J G = o Electrical Specifications T = 25 C, Unless Otherwise Specified C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0 V 1200 - - V CES C GE Emitter to Collector Breakdown Voltage BV I = 10 mA, V = 0 V 15 - - V ECS C GE o Collector to Emitter Leakage Current I V = 1200 V T = 25C- - 250 A CES CE C o T = 125C- 300 - A C o T = 150C- - 4 mA C o Collector to Emitter Saturation Voltage V I = 18 A, T = 25 C - 2.45 2.7 V CE(SAT) C C V = 15 V GE o T = 150C- 3.8 4.2 V C Gate to Emitter Threshold Voltage V I = 150 A, V = V 6.0 7.0 - V GE(TH) C CE GE Gate to Emitter Leakage Current I V = 20 V - - 250 nA GES GE o Switching SOA SSOA T = 150 C, R = 3, V = 15 V, 100 - - A J G GE L = 200 H, V = 1200 V CE(PK) Gate to Emitter Plateau Voltage V I = 18 A, V = 600 V - 10.5 - V GEP C CE On-State Gate Charge Q I = 18 A, V = 15 V - 165 200 nC G(ON) C GE V = 600 V CE V = 20 V - 220 250 nC GE o Current Turn-On Delay Time t IGBT and Diode at T = 25 C -23 28 ns d(ON)I J I = 18 A CE Current Rise Time t -17 22 ns rI V = 960 V CE V = 15 V Current Turn-Off Delay Time t GE -170 200 ns d(OFF)I R = 3 G Current Fall Time t -90 140 ns fI L = 1 mH Test Circuit (Figure 18) Turn-On Energy (Note 5) E -0.8 1.0 mJ ON1 Turn-On Energy (Note 5) E -1.9 2.4 mJ ON2 Turn-Off Energy (Note 3) E -1.8 2.2 mJ OFF 2001 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com HGTG18N120BN Rev. C1