X-On Electronics has gained recognition as a prominent supplier of RGT40NS65DGTL IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGT40NS65DGTL IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGT40NS65DGTL ROHM

Name: RGT40NS65DGTL
Brand: ROHM
SKU: RGT40NS65DGTL_ROHM
Availability: InStock
Rating: 5 (11 reviews)

RGT40NS65DGTL electronic component of ROHM

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Part No.	RGT40NS65DGTL
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	ROHM Semiconductor IGBT Transistors
Datasheet:	RGT40NS65DGTL Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.475 ea
Line Total: USD 2.48

Availability - 1882
Ship by Wed. 27 Nov to Fri. 29 Nov

MOQ: 1 Multiples: 1
Pack Size: 1

RGT40NS65DGTL More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1882

Ship by Wed. 27 Nov to Fri. 29 Nov

MOQ : 1
Multiples : 1

1 : USD 2.475
10 : USD 1.903
100 : USD 1.441
500 : USD 1.276
1000 : USD 1.276
2000 : USD 1.221

We are delighted to provide the RGT40NS65DGTL from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGT40NS65DGTL and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGT40NS65D 650V 20A Field Stop Trench IGBT Data Sheet lOutline LPDS / TO-262 V 650V CES (2) I 20A C(100C) V 1.65V CE(sat) (Typ.) (1) (3) P 161W D (1)(2) (3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) Low Switching Loss (1) Gate (2) Collector *1 3) Short Circuit Withstand Time 5s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Taping / Tube lApplications General Inverter Reel Size (mm) 330 / - UPS Tape Width (mm) 24 / - Type Power Conditioner Basic Ordering Unit (pcs) 1,000 / 1,000 Welder Packing code TL / C9 Marking RGT40NS65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 40 A C C Collector Current T = 100C I 20 A C C *1 Pulsed Collector Current 60 A I CP T = 25C I 35 A C F Diode Forward Current T = 100C I 20 A C F *1 Diode Pulsed Forward Current 60 A I FP T = 25C P 161 W C D Power Dissipation T = 100C P 70 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 1/11Data Sheet RGT40NS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.93 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 2.12 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 13.3mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 20A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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RGT40NS65DGTL ROHM

RGT40NS65DGTL More Buying Options & Price Grid(s)

Specifications

RGT40NS65DGTL Alternative Parts

More Products By Manufacturer "ROHM"

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Additional Infomation About Product

HS Compliance

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Availability	Price	Buy Price	Quantity
1882 Ship by Wed. 27 Nov to Fri. 29 Nov MOQ : 1 Multiples : 1	1 : USD 2.475 10 : USD 1.903 100 : USD 1.441 500 : USD 1.276 1000 : USD 1.276 2000 : USD 1.221

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