X-On Electronics has gained recognition as a prominent supplier of RGT50TM65DGC9 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGT50TM65DGC9 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGT50TM65DGC9 ROHM

Name: RGT50TM65DGC9
Brand: ROHM
SKU: RGT50TM65DGC9_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGT50TM65DGC9 electronic component of ROHM

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Part No.	RGT50TM65DGC9
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Trench Field Stop 650 V 21 A 47 W Through Hole TO-220NFM
Datasheet:	RGT50TM65DGC9 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.9275 ea
Line Total: USD 3.93

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

RGT50TM65DGC9 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 21 Feb to Thu. 27 Feb MOQ : 1 Multiples : 1	1 : USD 4.2935 10 : USD 3.7028 100 : USD 3.0345 500 : USD 2.5832 1000 : USD 2.1787 2000 : USD 2.0697 5000 : USD 2.0094

0 Ship by Wed. 19 Feb to Fri. 21 Feb MOQ : 1 Multiples : 1	1 : USD 3.9275 10 : USD 3.2612 50 : USD 3.1204 100 : USD 2.745 500 : USD 2.3086

0 Ship by Wed. 19 Feb to Fri. 21 Feb MOQ : 1 Multiples : 1	1 : USD 3.3372 5 : USD 2.9956 7 : USD 2.2335 19 : USD 2.1022

We are delighted to provide the RGT50TM65DGC9 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGT50TM65DGC9 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGT50TM65D 650V 25A Field Stop Trench IGBT Datasheet Outline TO-220NFM V 650V CES I 13A C(100C) V 1.65V I =25A CE(sat) (Typ.) C P 47W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Tube Applications General Inverter Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 1,000 Welder Packing Code C9 RGT50TM65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 21 A C C Collector Current T = 100C I 13 A C C *1 75 A Pulsed Collector Current I CP T = 25C I 22 A C F Diode Forward Current T = 100C I 13 A C F *1 Diode Pulsed Forward Current 75 A I FP T = 25C P 47 W C D Power Dissipation T = 100C P 23 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/11Datasheet RGT50TM65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 3.19 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 4.47 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 17.5mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 25A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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