X-On Electronics has gained recognition as a prominent supplier of RGT16TM65DGC9 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGT16TM65DGC9 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGT16TM65DGC9 ROHM

RGT16TM65DGC9 electronic component of ROHM
RGT16TM65DGC9 ROHM
RGT16TM65DGC9 IGBT Transistors
RGT16TM65DGC9 Semiconductors

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See Product Specifications
Part No. RGT16TM65DGC9
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors FIELD STOP TRENCH IGBT
Datasheet: RGT16TM65DGC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.7 ea
Line Total: USD 2.7 
Availability - 836
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1

 RGT16TM65DGC9 More Buying Options & Price Grid(s)

Availability Price Quantity
836
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 2.7
10 : USD 1.992
100 : USD 1.386
500 : USD 1.232
1000 : USD 1.177
10000 : USD 1.166

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGT16TM65DGC9 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGT16TM65DGC9 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGT16TM65D 650V 8A Field Stop Trench IGBT Datasheet Outline TO-220NFM V 650V CES I 5A C(100C) V 1.65V I =8A CE(sat) (Typ.) C P 22W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Tube Applications General Inverter Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 1,000 Welder Packing Code C9 RGT16TM65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 9A C C Collector Current T = 100C I 5A C C *1 24 A Pulsed Collector Current I CP T = 25C I 13 A C F Diode Forward Current T = 100C I 7A C F *1 Diode Pulsed Forward Current 24 A I FP T = 25C P 22 W C D Power Dissipation T = 100C P 11 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/11Datasheet RGT16TM65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 6.53 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 6.70 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 5.5mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 8A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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RHM
ROHM Semicon
ROHM Semiconductor

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