X-On Electronics has gained recognition as a prominent supplier of RGCL60TS60GC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGCL60TS60GC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGCL60TS60GC11 ROHM

RGCL60TS60GC11 electronic component of ROHM
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Part No.RGCL60TS60GC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Trench Field Stop 600 V 48 A 111 W Through Hole TO-247N
Datasheet: RGCL60TS60GC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.156 ea
Line Total: USD 2.16 
Availability - 691
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 RGCL60TS60GC11 More Buying Options & Price Grid(s)

Availability Price Quantity
691
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 2.156
10 : USD 2.068
450 : USD 2.002

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGCL60TS60GC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGCL60TS60GC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGCL60TS60 665000VV 3 300AA Fie Field Sld Stotop Trep Trench nch IGIGBTBT Data Sheet lOutline TO-247N V 600V CES I 30A C(100C) V 1.4V CE(sat) (Typ.) P 111W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Soft Switching (2) Collector 3) Pb - free Lead Plating RoHS Compliant (1) (3) Emitter (3) lApplications lPackaging Specifications Partial Switching PFC Packaging Tube Discharge Circuit Reel Size (mm) - Brake for Inverter Tape Width (mm) - Type Basic Ordering Unit (pcs) 450 Taping Code C11 Marking RGCL60TS60 lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 600 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 48 A C C Collector Current T = 100C I 30 A C C *1 Pulsed Collector Current 120 A I CP T = 25C P 111 W C D Power Dissipation T = 100C P 55 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.A 1/9Data Sheet RGCL60TS60 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 1.34 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 600 - - V CES C GE Voltage Collector Cut - off Current I V = 600V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage Current I V = 30V, V = 0V - - nA 200 GES GE CE Gate - Emitter Threshold V V = 5V, I = 18.9mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 30A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.4 1.8 V CE(sat) j Voltage T = 175C - 1.6 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.A 2/9

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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