X-On Electronics has gained recognition as a prominent supplier of RGPR30BM40HRTL igbt transistors across the USA, India, Europe, Australia, and various other global locations. RGPR30BM40HRTL igbt transistors are a product manufactured by ROHM. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

RGPR30BM40HRTL

RGPR30BM40HRTL electronic component of ROHM
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See Product Specifications
Part No.RGPR30BM40HRTL
Manufacturer: ROHM
Category:IGBT Transistors
Description: IGBT Transistors 400V 30A 1.6V Vce Ignition IGBT
Datasheet: RGPR30BM40HRTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0562 ea
Line Total: USD 2.06

Availability - 4670
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13441 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 1.6905
10 : USD 1.38
100 : USD 1.196
250 : USD 1.1465
500 : USD 1.0315
1000 : USD 0.897
2500 : USD 0.8889
5000 : USD 0.8889
10000 : USD 0.8625

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We proudly offer the RGPR30BM40HRTL IGBT Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RGPR30BM40HRTL IGBT Transistors.

RGPR30BM40 Data sheet 400V 30A Ignition IGBT lOutline TO-252 BV 40030V CES (2) I 30A C V 1.6V (1) CE(sat) (Typ.) (3) E 300mJ AS lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Self-Clamped Inductive Switching Energy (2) Collector (1) 3) Built in Gate-Emitter Protection Diode (3) Emitter 4) Built in Gate-Emitter Resistance 5) Qualified to AEC-Q101 (3) 6) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Taping Reel Size (mm) 330 lApplications Ignition Coil Driver Circuits Tape Width (mm) 16 Type Solenoid Driver Circuits Basic Ordering Unit (pcs) 2,500 Packing Code TL RGPR30BM40 Marking lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 430 V CES Emitter-Collector Voltage (V = 0V) V 25 V GE EC Gate - Emitter Voltage V V 10 GES I Collector Current 30 A C T = 25C E 300 mJ j AS Avalanche Energy (Single Pulse) *2 T = 150C 180 mJ E j AS P Power Dissipation 125 W D T Operating Junction Temperature -40 to +175 C j Storage Temperature T C -55 to +175 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/9Datasheet RGPR30BM40 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 1.20 C/W (j-c) lElectrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. I = 2mA, V = 0V C GE Collector - Emitter Breakdown BV T = 25C 370 400 430 V CES j Voltage *2 T = -40 to 175C 365 - 435 V j Emitter - Collector Breakdown BV I = -10mA, V = 0V 25 35 - V EC C GE Voltage Gate - Emitter Breakdown BV I = 5mA, V = 0V 12 - 17 V GES G CE Voltage V = 250V, V = 0V CE GE Collector Cut - off Current I T = 25C - - 7 A CES j *2 T = 150C - - 100 A j I V = 10V, V = 0V Gate - Emitter Leakage Current 0.4 0.6 1.2 mA GES GE CE V = 5V, I = 12mA CE C Gate - Emitter Threshold V T = 25C 1.3 1.7 2.1 V GE(th) j Voltage *2 T = 150C - 1.3 - V j I = 12A, V = 5V C GE Collector - Emitter Saturation V T = 25C - 1.60 2.00 V CE(sat) j Voltage T = 150C - 1.80 - V j I = 5A, V = 4.5V C GE Collector - Emitter Saturation V T = 25C - 1.17 1.50 V CE(sat) j Voltage T = 150C - 1.19 - V j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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