X-On Electronics has gained recognition as a prominent supplier of RGTV60TS65DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGTV60TS65DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGTV60TS65DGC11 ROHM

Name: RGTV60TS65DGC11
Brand: ROHM
SKU: RGTV60TS65DGC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGTV60TS65DGC11 electronic component of ROHM

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Part No.	RGTV60TS65DGC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
Datasheet:	RGTV60TS65DGC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.8921 ea
Line Total: USD 6.89

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

RGTV60TS65DGC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 03 Jan to Tue. 07 Jan MOQ : 1 Multiples : 1	1 : USD 6.8921 10 : USD 5.7363 30 : USD 5.49 120 : USD 4.651

We are delighted to provide the RGTV60TS65DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGTV60TS65DGC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGTV60TS65D 650V 30A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 30A C(100C) V 1.5V CE(sat) (Typ.) P 194W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching & Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 2s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Tube Applications Solar Inverter Reel Size (mm) - UPS Tape Width (mm) - Type Welding Basic Ordering Unit (pcs) 450 IH Packing Code C11 RGTV60TS65D PFC Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES = 25C I T 60 A C C Collector Current T = 100C I 30 A C C *1 120 A Pulsed Collector Current I CP T = 25C I 56 A C F Diode Forward Current T = 100C I 30 A C F *1 Diode Pulsed Forward Current 120 A I FP T = 25C P 194 W C D Power Dissipation T = 100C P 97 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/11Datasheet RGTV60TS65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.77 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 1.17 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 21.0mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 30A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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