RGTVX6TS65GC11 ROHM

RGTVX6TS65 650V 80A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 80A C(100C) V 1.5V CE(sat) (Typ.) P 404W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching & Low Switching Loss (2) Collector 3) Short Circuit Withstand Time 2s (3) Emitter (1) 4) Pb - free Lead Plating RoHS Compliant (3) Applications Packaging Specifications Solar Inverter Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 PFC Packing Code C11 RGTVX6TS65 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES = 25C I T 144 A C C Collector Current T = 100C I 80 A C C *1 Pulsed Collector Current 320 A I CP T = 25C P 404 W C D Power Dissipation T = 100C P 202 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/9Datasheet RGTVX6TS65 Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.37 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage Current I V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 57.1mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 80A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/9