Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SPD Description rd Using the novel field stop 3 generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low www.onsemi.com conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. V E V CES on CE(Sat) Meanwhile, this part also offers and advantage of outstanding 650 V 1.16 mJ 1.85 V performance in parallel operation. Features C AECQ101 Qualified Low Saturation Voltage: V = 1.85 V (Typ.) I = 40 A CE(Sat) C 100% Of The Part Are Dynamically Tested (Note 1) G Short Circuit Ruggedness > 5 S 25C Maximum Junction Temperature: T = 175C J E Fast Switching Tight Parameter Distribution Positive Temperature Coefficient for Easy Parallel Operating CoPacked With Soft And Fast Recovery Diode Typical Applications G Onboard Charger C E TO2473L Air Conditioner Compressor CASE 340CX PTC Heater Motor Drivers MARKING DIAGRAM Other Automotive PowerTrain Applications &Y&Z&3&K AFGHL 40T65SPD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3Digit Data code &K = 2Digit Lot Traceability code AFGHL40T65SPD = Specific Device Code ORDERING INFORMATION Device Package Shipping AFGHL40T65SPD TO2473L 30 Units / Rail Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2020 Rev. 5 AFGHL40T65SPD/DAFGHL40T65SPD ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Description Ratings Units V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 80 A C C Collector Current T = 100C 40 C I Pulsed Collector Current (Note 2) 120 A CM I Diode Forward Current T = 25C 40 A F C Diode Forward Current T = 100C 20 C I Pulsed Diode Maximum Forward Current (Note 2) 120 A FM P Maximum Power Dissipation T = 25C 267 W D C Maximum Power Dissipation T = 100C 134 C SCWT Short Circuit Withstand Time T = 25C 5 s C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C stg T Maximum Lead Temp. For soldering 300 C L Purposes, from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 120 A, R = 20 , Inductive Load. CC GE C G 2. Repetitive rating: pulse width limited by max. Junction temperature. THERMAL CHARACTERISTICS Symbol Rating Max. Units R Thermal Resistance Junction to Case, for IGBT 0.43 C/W JC R Thermal Resistance Junction to Case, for Diode 1.69 C/W JC Thermal Resistance Junction to Ambient 40 R C/W JA www.onsemi.com 2