AUTOMOTIVE GRADE ULTRAFAST IGBT WITH CooliRIGBT ULTRAFAST SOFT RECOVERY DIODE Features C Designed And Qualified for Automotive Applications V = 600V CES Ultra Fast Switching IGBT:70-200kHz V typ. = 1.8V CE(on) Extremely Low Switching Losses Maximum Junction Temperature 175 C G I T =100C = 41A C C Square RBSOA E Positive V Temperature Coefficient T max = 175C CE (on) J n-channel Benefits Optimized High Frequency Switching Applications Rugged Transient Performance for Increased Reliability E E C Excellent Current Sharing in Parallel Operation C G G TO-247AD TO-247AC Applications AUIRGF65G40D0 AUIRGP65G40D0 DC-DC Converter PFC GC E G a te C o lle c to r E m itte r Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRGP65G40D0 TO-247AC Tube 25 AUIRGP65G40D0 AUIRGF65G40D0 TO-247AD Tube 25 AUIRGF65G40D0 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25 C, unless otherwise specified. A Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 62 C C I T = 100C Continuous Collector Current 41 C C I Nominal Current 200kHz A 20 NOMINAL I Pulse Collector Current 84 CM I Clamped Inductive Load Current 112 LM I T = 25C Diode Continous Forward Current 46.1 F C I T = 100C Diode Continous Forward Current 30 F C I Maximum Repetitive Forward Current 112 FRM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 625 D C W P T = 100C Maximum Power Dissipation 313 D C T Operating Junction and J -55 to +175 T C Storage Temperature Range STG Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Junction-to-Case-(each IGBT) 0.24 JC Junction-to-Case-(each Diode) R (Diode) 1.78 JC C/W R Case-to-Sink (flat, greased surface) 0.24 CS R Junction-to-Ambient (typical socket mount) 40 JA 6.0 (0.21) g (oz) *Qualification standards can be found at Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.18 V/C V = 0V, I = 1.0mA (25C-175C) (BR)CES J GE C 1.4 I = 12A, V = 15V, T = 25C C GE J 1.8 2.2 I = 20A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 1.9 I = 12A, V = 15V, T = 150C CE(on) C GE J 2.6 V I = 20A, V = 15V, T = 150C C GE J 2.2 I = 12A, V = 15V, T = 175C C GE J 3.0 I = 20A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GE(th) CE GE C V / TJ Threshold Voltage temp. coefficient -12 mV/C V = V , I = 1.0mA (25C - 175C) GE(th) CE GE C gfe Forward Transconductance 36 S V = 50V, I = 20A CE C I Collector-to-Emitter Leakage Current 3.2 25 A V = 0V, V = 600V CES GE CE 0.81 mA V = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 1.7 2.45 V I = 20A FM F 1.4 I = 20A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 180 270 I = 20A g C Q Gate-to-Emitter Charge (turn-on) 28 42 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 64 96 V = 400V gc CC E Turn-On Switching Loss 298 389 I = 20A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 147 234 J R = 4.7 , L = 485H, T = 25C off G J E Total Switching Loss 445 623 Energy losses include tail & diode reverse recovery total t Turn-On delay time 35 53 I = 20A, V = 400V, V = 15V d(on) C CC GE t Rise time 1229ns R = 4.7 , L = 485H, T = 25C r G J Turn-Off delay time 142 163 t d(off) t Fall time 15 32 f E Turn-On Switching Loss 630 I = 20A, V = 400V, V =15V on C CC GE E Turn-Off Switching Loss 137 J R = 4.7 , L = 485H, T = 175C off G J E Total Switching Loss 767 Energy losses include tail & diode reverse recovery total t Turn-On delay time 33 I = 20A, V = 400V, V = 15V d(on) C CC GE t Rise time 12 ns R = 4.7 , L = 485H r G t Turn-Off delay time 165 T = 175C d(off) J t Fall time 16 f C Input Capacitance 4673 pF V = 0V ies GE C Output Capacitance 337 V = 30V oes CC C Reverse Transfer Capacitance 58 f = 1.0Mhz res Effective Output Capacitance (Time Related) C eff. 406 V = 0V, V = 0V to 480V oes GE CE Effective Output Capacitance (Energy Related) C eff. (ER) 162 oes T = 175C, I = 80A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 4.7 , V = +20V to 0V GE t Diode Reverse Recovery Time 41 ns T = 25C I = 20A, V = 200V, rr J F R 70 T = 125C di/dt = 200A/s J Q Diode Reverse Recovery Charge 116 nC T = 25C I = 20A, V = 200V, rr J F R 580 T = 125C di/dt = 200A/s J I Peak Reverse Recovery Current 4.8 A T = 25C I = 20A, V = 200V, rr J F R 7.2 T = 125C di/dt = 200A/s J through are on page 13