IGBT - Field Stop, IV/4 Lead FGH75T65SQDNL4 This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO2474L package that provides significant reduction in E Losses compared to standard TO2473L www.onsemi.com on package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free 75 A, 650 V wheeling diode with a low forward voltage. Features V (Typ.) = 1.6 V CEsat Extremely Efficient Trench with Field Stop Technology T = 175C Jmax C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO2474L for Minimal E Losses on G Optimized for High Speed Switching 100% of the Parts Tested for I LM E1 These are PbFree Devices E Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Neutral Point Clamp Topology TO2474LD C ABSOLUTE MAXIMUM RATINGS E CASE 340CJ E1 G Rating Symbol Value Unit Collectoremitter voltage V 650 V CES MARKING DIAGRAM Collector current I A C TC = 25C 150 TC = 100C 75 Diode Forward Current I A F TC = 25C 150 FGH75T65 TC = 100C 75 SQDNL4 Diode Pulsed Current I 300 A AYWWG FM T Limited by T Max PULSE J Pulsed collector current, T I 300 A pulse CM limited by T I Jmax LM Gateemitter voltage V 20 V GE V Transient gateemitter voltage 30 A = Assembly Location (T = 5 s, D < 0.10) Y = Year PULSE WW = Work Week Power Dissipation P W D G = PbFree Package TC = 25C 375 TC = 100C 188 Operating junction temperature range T 55 to +175 C J ORDERING INFORMATION Storage temperature range T 55 to +175 C stg Device Package Shipping Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds FGH75T65SQDNL4 TO247 30 Units / Rail (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2019 Rev. 4 FGH75T65SQDNL4/DFGH75T65SQDNL4 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.4 C/W JC Thermal resistance junctiontocase, for Diode R 0.65 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 650 V (BR)CES GE C gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 75 A V 1.6 2.1 V GE C CEsat V = 15 V, I = 75 A, T = 175C 1.92 GE C J Gateemitter threshold voltage V = V , I = 75 mA V 4.0 4.8 5.6 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 650 V I 0.25 mA GE CE CES emitter shortcircuited V = 0 V, V = 650 V, T 175C 6.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 250 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 5100 pF ies Output capacitance V = 30 V, V = 0 V, f = 1 MHz C 115 oes CE GE Reverse transfer capacitance C 12 res Gate charge total Q 152 nC g Gate to emitter charge V = 400 V, I = 75 A, V = 15 V Q 29 CE C GE ge Gate to collector charge Q 39 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 59 ns d(on) Rise time t 58 r Turnoff delay time T = 25C t 354 J d(off) V = 400 V, I = 75 A CC C Fall time t 69 f R = 20 g Turnon switching loss V = 15 V E 1.82 mJ GE on Turnoff switching loss E 1.86 off Total switching loss E 3.68 ts Turnon delay time t 56 ns d(on) Rise time t 57 r Turnoff delay time T = 175C t 394 J d(off) V = 400 V, I = 75 A CC C Fall time t 73 f R = 20 g Turnon switching loss V = 15 V E 2.22 mJ GE on Turnoff switching loss E 2.02 off Total switching loss E 4.24 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 75 A V 1.60 2.0 V GE F F V = 0 V, I = 75 A, T = 175C 1.70 GE F J Reverse recovery time t 134 ns rr T = 25C J Reverse recovery charge Q 0.78 C I = 75 A, V = 200 V F R rr di /dt = 200 A/ s F Reverse recovery current I 10 A rrm Reverse recovery time t 202 ns rr T = 175C J Reverse recovery charge I = 75 A, V = 200 V Q 2.54 C rr F R di /dt = 200 A/ s F Reverse recovery current I 20.2 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2