IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD-F085 Description Using Novel Field Stop Trench IGBT Technology, ON Semiconductors new series of Field Stop Trench IGBTs offer www.onsemi.com the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. C Features Maximum Junction Temperature : T = 175C J Positive Temperature Coefficient for Easy Parallel Operating High Current Capability G Low Saturation Voltage: V = 1.65 V (Typ.) I = 75 A CE(sat) C High Input Impedance E Tightened Parameter Distribution AECQ101Qualified and PPAP Capable E C This Device is PbFree and is RoHS Compliant GG Applications Automotive Chargers, Converters, High Voltage Auxiliaries COLLECTOR (FLANGE) Solar Inverters, UPS, Digital Power Generator TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH75T65 UPD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65UPD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: February, 2020 Rev. 4 FGH75T65UPDF085/DFGH75T65UPD F085 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage V 650 V CES Gate to Emitter Voltage V 20 V GES Collector Current TC = 25C I 150 A C TC = 100C 75 A Pulsed Collector Current I (Note 1) 225 A CM Diode Forward Current TC = 25C I 75 A F TC = 100C 50 A Pulsed Diode Maximum Forward Current I (Note 1) 225 A FM Maximum Power Dissipation P TC = 25C 375 W D TC = 100C 187 W Short Circuit Withstand Time TC = 25C SCWT 5 s Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Ratings Unit Thermal Resistance, JunctiontoCase R (IGBT) (Note 2) 0.4 C/W JC Thermal Resistance, JunctiontoCase 0.86 C/W R (Diode) JC Parameter Symbol Typ Thermal Resistance, JunctiontoAmbient (PCB Mount) (Note 2) R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FGH75T65UPDF085 FGH75T65UPD TO247 Tube 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 1 mA 650 V CES GE C Temperature Coefficient of Breakdown BV / V = 0 V, I = 1 mA 0.65 V/C CES GE C Voltage T J Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE I at 80% * B , 175C 3600 CES VCES GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 75 mA, V = V 4.0 6.0 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 75 A, V = 15 V 1.69 2.3 V CE(sat) C GE I = 75 A, V = 15 V, T = 175C 2.21 V C GE C www.onsemi.com 2