FGPF4536 360 V PDP Trench IGBT November 2013 FGPF4536 360 V PDP Trench IGBT Features General Description High Current Capability Using novel trench IGBT technology, Fairchilds new series of trench IGBTs offer the optimum performance for consumer Low Saturation Voltage: V =1.59 V I = 50 A CE (sat) C appliances, PDP TV and lighting applications where low con- High Input Impedance duction and switching losses are essential. Fast Switching RoHS Compliant Applications PDP TV, Consumer appliances, Lighting TO-220F G C E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 360 V CES V Gate to Emitter Voltage 30 V GES o Pulsed Collector Current T = 25C220 A I C C pulse(1)* o Maximum Power Dissipation T = 25 C 28.4 W C P D o Maximum Power Dissipation T = 100C11.4 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 4.4 C/W JC o R Thermal Resistance, Junction to Ambient - 62.5 C/W JA Notes: (1) Half Sine Wave, D < 0.01, pluse width < 1 sec * Ic pluse limited by max Tj 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF4536 Rev. C1FGPF4536 360 V PDP Trench IGBT Package Marking and Ordering Information Packing Part Number Top Mark Package Reel Size Tape Width Quantity Method FGPF4536 FGPF4536 TO-220F Tube N/A N/A 50 Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV Collector to Emitter Breakdown Voltage V = 0V, I = 250 A 360 - - V CES GE C BV / Temperature Coefficient of Breakdown CES o V = 0V, I = 250 A -0.4 - V/ C GE C T Voltage J I Collector Cut-Off Current V = V , V = 0 V - - 100 A CES CE CES GE I G-E Leakage Current V = V , V = 0 V - - 400 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 250 A, V = V 2.4 3.34.0 V GE(th) C CE GE I = 20 A, V = 15 V -1.19 - V C GE I = 30 A, V = 15 V C GE -1.33 - V V Collector to Emitter CE(sat) Saturation Voltage I = 50 A, V = 15 V, C GE - 1.59 1.8 V o T = 25 C C I = 50 A, V = 15 V, C GE -1.66 - V o T = 125 C C Dynamic Characteristics C Input Capacitance - 1295 - pF ies V = 30 V V = 0 V, CE , GE C Output Capacitance - 56 - pF oes f = 1MHz C Reverse Transfer Capacitance - 43 - pF res Switching Characteristics t Turn-On Delay Time -5 - ns d(on) V = 200 V, I = 20 A, CC C t Rise Time - 20 - ns r R = 5 , V = 15 V, G GE o t Turn-Off Delay Time - 41 - ns d(off) Resistive Load, T = 25 C C t Fall Time - 182 - ns f t Turn-On Delay Time -4.6 - ns d(on) V = 200 V, I = 20 A, CC C t Rise Time - 21 - ns r R = 5 , V = 15 V, G GE o t Turn-Off Delay Time - 43 - ns d(off) Resistive Load, T = 125 C C t Fall Time - 249 - ns f Q Total Gate Charge -47 - nC g V = 200 V I = 20 A, CE , C Q Gate to Emitter Charge - 5.4 - nC ge V = 15 V GE Q Gate to Collector Charge - 15 - nC gc 2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FGPF4536 Rev. C1