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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGY40T120SMD 1200 V, 40 A Field Stop Trench IGBT March 2016 FGY40T120SMD 1200 V, 40 A Field Stop Trench IGBT Features General Description FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchilds High Speed Switching new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar Low Saturation Voltage: V =1.8 V I = 40 A CE(sat) C inverter, UPS, welder and PFC applications. 100% of the Parts tested for I (1) LM High Input Impedance Applications RoHS Compliant Solar Inverter, Welder, UPS & PFC applications. C G Power TO247 G (TO-247H03) C E E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description FGY40T120SMD Unit V Collector to Emitter Voltage 1200 V CES Gate to Emitter Voltage 25 V V GES Transient Gate to Emitter Voltage 30 V o Collector Current T = 25 C 80 A C I C o Collector Current T = 100 C 40 A C o I (1) Clamped Inductive Load Current 160 A T = 25 C LM C I (2) Pulsed Collector Current 160 A CM o Diode Continuous Forward Current 80 A T = 25 C C I F o Diode Continuous Forward Current 40 A T = 100 C C I Diode Maximum Forward Current 240 A FM o Maximum Power Dissipation T = 25 C 882 W C P D o Maximum Power Dissipation T = 100 C 441 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case -- 0.17 C/W JC o R (Diode) Thermal Resistance, Junction to Case -- 0.55 C/W JC o R Thermal Resistance, Junction to Ambient -- 40 C/W JA Notes: 1. Vcc = 600 V,V = 15 V, I = 160 A, R = 10 , Inductive Load GE C G 2. Limited by Tjmax 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGY40T120SMD Rev. 1.2