X-On Electronics has gained recognition as a prominent supplier of FH102A-TR-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FH102A-TR-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FH102A-TR-E ON Semiconductor

FH102A-TR-E electronic component of ON Semiconductor
FH102A-TR-E ON Semiconductor
FH102A-TR-E Bipolar Transistors - BJT
FH102A-TR-E  Semiconductors

Images are for reference only
See Product Specifications
Part No. FH102A-TR-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT PCHPCH 4V DRIVE SERIES
Datasheet: FH102A-TR-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.3115
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7448
10 : USD 0.6133
100 : USD 0.3959
1000 : USD 0.3167
3000 : USD 0.3112
9000 : USD 0.3112
24000 : USD 0.2992
45000 : USD 0.2949
99000 : USD 0.2883
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.4512
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FH102A-TR-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FH102A-TR-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : ENA1125A FH102A RF Transistor FH102A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 10 A EBO EB C DC Current Gain h V =5V, I =20mA 90 200 FE CE C DC Current Gain Ratio h (small/large) V =5V, I =20mA 0.7 0.95 FE CE C Base-to-Emitter Voltage Diffrence V (large-small) V =5V, I =20mA 10 mV BE CE C Gain-Bandwidth Product f V =5V, I =20mA 5 7 GHz T CE C Output Capacitance Cob V =10V, f=1MHz 0.75 1.2 pF CB Reverse Transfer Capacitance Cre V =10V, f=1MHz 0.5 pF CB 2 S21e1V =5V, I =20mA, f=1GHz 9 12 dB CE C Forward Transfer Gain 2 S21e2V =2V, I =3mA, f=1GHz 8 dB CE C Noise Figure NF V =5V, I =7mA, f=1GHz 1.0 1.8 dB CE C Note) The speci cations shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is also shown. Ordering Information Device Package Shipping memo FH102A-TR-E MCP6 3,000pcs./reel Pb Free h -- I f -- I FE C T C 3 2 V =5V V =5V CE CE 2 10 100 7 7 5 5 3 3 2 2 1.0 10 7 7 5 5 3557 237 23 5 7 2 7 23 5 7 2 35 7 2 1.0 10 100 1.0 10 100 Collector Current, I -- mA ITR10753 ITR10754 Collector Current, I -- mA C C No. A1125-2/8 DC Current Gain, h FE Gain-Bandwidth Product, f -- GHz T

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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