Ordering number : ENA1125A FH102A RF Transistor FH102A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 10 A EBO EB C DC Current Gain h V =5V, I =20mA 90 200 FE CE C DC Current Gain Ratio h (small/large) V =5V, I =20mA 0.7 0.95 FE CE C Base-to-Emitter Voltage Diffrence V (large-small) V =5V, I =20mA 10 mV BE CE C Gain-Bandwidth Product f V =5V, I =20mA 5 7 GHz T CE C Output Capacitance Cob V =10V, f=1MHz 0.75 1.2 pF CB Reverse Transfer Capacitance Cre V =10V, f=1MHz 0.5 pF CB 2 S21e1V =5V, I =20mA, f=1GHz 9 12 dB CE C Forward Transfer Gain 2 S21e2V =2V, I =3mA, f=1GHz 8 dB CE C Noise Figure NF V =5V, I =7mA, f=1GHz 1.0 1.8 dB CE C Note) The speci cations shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is also shown. Ordering Information Device Package Shipping memo FH102A-TR-E MCP6 3,000pcs./reel Pb Free h -- I f -- I FE C T C 3 2 V =5V V =5V CE CE 2 10 100 7 7 5 5 3 3 2 2 1.0 10 7 7 5 5 3557 237 23 5 7 2 7 23 5 7 2 35 7 2 1.0 10 100 1.0 10 100 Collector Current, I -- mA ITR10753 ITR10754 Collector Current, I -- mA C C No. A1125-2/8 DC Current Gain, h FE Gain-Bandwidth Product, f -- GHz T