X-On Electronics has gained recognition as a prominent supplier of 2N4401 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N4401 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N4401 ON Semiconductor

2N4401 electronic component of ON Semiconductor
2N4401 ON Semiconductor
2N4401 Bipolar Transistors - BJT
2N4401  Semiconductors

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See Product Specifications
Part No. 2N4401
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Datasheet: 2N4401 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0259 ea
Line Total: USD 2.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 03 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 2.0259
101 : USD 1.8417
250 : USD 0.549
500 : USD 0.3789
1000 : USD 0.2844
2500 : USD 0.2029
5000 : USD 0.1408
10000 : USD 0.0821

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the 2N4401 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4401 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N4401 General Purpose Transistors NPN Silicon 2N4401 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 60 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 6.0 Vdc E C (BR)EBO Base Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB BEV Collector Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB CEX ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 20 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 40 C CE (I = 10 mAdc, V = 1.0 Vdc) 80 C CE (I = 150 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 500 mAdc, V = 2.0 Vdc) 40 C CE Collector Emitter Saturation Voltage (I = 150 mAdc, I = 15 mAdc) V 0.4 Vdc C B CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.75 C B Base Emitter Saturation Voltage (I = 150 mAdc, I = 15 mAdc) V 0.75 0.95 Vdc C B BE(sat) 1.2 (I = 500 mAdc, I = 50 mAdc) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) f 250 MHz C CE T CollectorBase Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 6.5 pF CB E cb EmitterBase Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 30 pF EB C eb Input Impedance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 15 k C CE ie 4 Voltage Feedback Ratio (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 0.1 8.0 X 10 C CE re SmallSignal Current Gain (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 40 500 C CE fe Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 30 mhos C CE oe SWITCHING CHARACTERISTICS Delay Time t 15 ns d (V = 30 Vdc, V = 2.0 Vdc, CC BE I = 150 mAdc, I = 15 mAdc) Rise Time C B1 t 20 ns r Storage Time t 225 ns (V = 30 Vdc, I = 150 mAdc, s CC C I = I = 15 mAdc) B1 B2 Fall Time t 30 ns f 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping 2N4401 TO92 5000 Units / Bulk 2N4401G TO92 5000 Units / Bulk (Pb Free) 2N4401RLRA TO92 2000 / Tape & Reel 2N4401RLRAG TO92 2000 / Tape & Reel (Pb Free) 2N4401RLRMG TO92 2000 / Tape & Ammo Box (Pb Free) 2N4401RLRP TO92 2000 / Tape & Ammo Box 2N4401RLRPG TO92 2000 / Tape & Ammo Box (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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