CMUT2907A www.centralsemi.com SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMUT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: FC2 SOT-523 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=50V 10 nA CBO CB I V =50V, T=125C 10 A CBO CB A I V =30V, V=0.5V 50 nA CEV CE BE BV I=10A 60 V CBO C BV I=10mA 60 V CEO C BV I=10A 5.0 V EBO E V I =150mA, I=15mA 0.4 V CE(SAT) C B V I =500mA, I=50mA 1.6 V CE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B V I =500mA, I=50mA 2.6 V BE(SAT) C B h V =10V, I=0.1mA 75 FE CE C h V =10V, I=1.0mA 100 FE CE C h V =10V, I=10mA 100 FE CE C h V =10V, I=150mA 100 300 FE CE C h V =10V, I=500mA 50 FE CE C R3 (9-February 2010)CMUT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =20V, I =50mA, f=100MHz 200 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz 30 pF ib BE C t V =30V, V =0.5V, I =150mA, I=15mA 45 ns on CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 10 ns d CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 40 ns r CC BE C B1 t V =6.0V, I =150mA, I =I=15mA 100 ns off CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 80 ns s CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 30 ns f CC C B1 B2 SOT-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter (Bottom View) 3) Collector MARKING CODE: FC2 R3 (9-February 2010) www.centralsemi.com