Dual General Purpose Transistors NPN Duals BC846BDW1, BC847BDW1, BC848CDW1 www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is designed for low power surface mount applications. Features SOT363/SC88 S and NSV Prefixes for Automotive and Other Applications CASE 419B STYLE 1 Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS (3) (2) (1) Compliant* Q Q 1 2 MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector Emitter Voltage V 65 45 30 V (4) (5) (6) CEO Collector Base Voltage V 80 50 30 V CBO MARKING DIAGRAM Emitter Base Voltage V 6.0 6.0 5.0 V EBO Collector Current I 100 100 100 mAdc C 6 Continuous 1x M Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 THERMAL CHARACTERISTICS 1x = Specific Device Code Characteristic Symbol Max Unit x = B, F, G, L M = Date Code Total Device Dissipation P 380 mW D Per Device 250 mW = PbFree Package FR5 Board (Note 1) (Note: Microdot may be in either location) T = 25C A Derate Above 25C 3.0 mW/C ORDERING INFORMATION Thermal Resistance, R C/W JA See detailed ordering and shipping information in the package Junction to Ambient 328 dimensions section on page 6 of this data sheet. Junction and Storage Temperature T , T 55 to +150 C J stg Range 1. FR5 = 1.0 x 0.75 x 0.062 in *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2021 Rev. 12 BC846BDW1T1/DBC846BDW1, BC847BDW1, BC848CDW1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 10 mA) C BC846 65 BC847 45 BC848 30 Collector Emitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) C EB BC846 80 BC847 50 BC848 30 Collector Base Breakdown Voltage V V (BR)CBO (I = 10 A) C BC846 80 BC847 50 30 BC848 Emitter Base Breakdown Voltage V V (BR)EBO (I = 1.0 A) E BC846 6.0 6.0 BC847 BC848 5.0 Collector Cutoff Current I CBO (V = 30 V) 15 nA CB (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) C CE BC846B, BC847B 150 BC847C, BC848C 270 (I = 2.0 mA, V = 5.0 V) C CE BC846B, BC847B 200 290 450 BC847C, BC848C 420 520 800 Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.25 C B (I = 100 mA, I = 5.0 mA) 0.6 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage V mV BE(on) (I = 2.0 mA, V = 5.0 V) 580 660 700 C CE (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) 100 C CE Output Capacitance C pF obo (V = 10 V, f = 1.0 MHz) 4.5 CB Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k ,f = 1.0 kHz, BW = 200 Hz) 10 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2