V (Volts) - V - (Volts) V - (Volts) h Norm - alised Gain (%) SOT23 PNP SILICON PLANAR FMMT551 FMMT551 MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO E * 1 Amp continuous current 100 C -0.8 80 -0.6 B COMPLEMENTARY TYPE FMMT451 60 PARTMARKING DETAIL 551 -0.4 40 IC/IB =10 -0.2 ABSOLUTE MAXIMUM RATINGS. 20 PARAMETER SYMBOL VALUE UNIT 0 -0.01 -0.1 -1 -10 Collector-Base Voltage V -80 V -0.001 -0.01 -0.1 -1 -10 CBO Collector-Emitter Voltage V -60 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V -5 V EBO VCE(sat) v IC hFE v IC Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Base Current I -200 mA B Power Dissipation at T =25C P 500 mW -1.4 -1.0 amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg -0.9 -1.2 ELECTRICAL CHARACTERISTICS (at T = 25C). amb -0.8 -1.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base V -80 V I =-100A (BR)CBO C -0.7 -0.8 Breakdown Voltage Collector-Emitter V -60 V I =-10mA* -0.6 -0.6 CEO(sus) C -0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 Sustaining Voltage IC - Collector Current (Amps) C Collector Current (Amps) I - Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E Voltage VBE(on) v IC VBE(sat) v IC Collector Cut-Off Current I -0.1 A V =-60V CBO CB Emitter Cut-Off Current I -0.1 V =-4V 10 A EBO EB Collector-Emitter V -0.35 V I =-150mA, I =-15mA* CE(sat) C B Saturation Voltage 1 Base-Emitter V -1.1 V I =-150mA, I =-15mA* BE(sat) C B DC 1s Saturation Voltage 100ms 10ms 0.1 1ms Static Forward Current h 50 150 I =-150mA, V =-10V* FE C CE 100s Transfer Ratio 10 I =-1A, V =-10V* C CE Transition f 150 MHz I =-50mA, V =-10V 0.01 T C CE 0.1V 1V 10V 100V Frequency f=100MHz Output Capacitance C 25 pF V =-10V, f=1MHz obo CB VCE - Collector Emitter Voltage (V) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Safe Operating Area Spice parameter data is available upon request for this device 3 - 130 3 - 129 V (Volts) - V - (Volts) V - (Volts) h Norm - alised Gain (%) SOT23 PNP SILICON PLANAR FMMT551 FMMT551 MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO E * 1 Amp continuous current 100 C -0.8 80 -0.6 B COMPLEMENTARY TYPE FMMT451 60 PARTMARKING DETAIL 551 -0.4 40 IC/IB =10 -0.2 ABSOLUTE MAXIMUM RATINGS. 20 PARAMETER SYMBOL VALUE UNIT 0 -0.01 -0.1 -1 -10 Collector-Base Voltage V -80 V -0.001 -0.01 -0.1 -1 -10 CBO Collector-Emitter Voltage V -60 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V -5 V EBO VCE(sat) v IC hFE v IC Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Base Current I -200 mA B Power Dissipation at T =25C P 500 mW -1.4 -1.0 amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg -0.9 -1.2 ELECTRICAL CHARACTERISTICS (at T = 25C). amb -0.8 -1.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base V -80 V I =-100A (BR)CBO C -0.7 -0.8 Breakdown Voltage Collector-Emitter V -60 V I =-10mA* -0.6 -0.6 CEO(sus) C -0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 Sustaining Voltage IC - Collector Current (Amps) C Collector Current (Amps) I - Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E Voltage VBE(on) v IC VBE(sat) v IC Collector Cut-Off Current I -0.1 A V =-60V CBO CB Emitter Cut-Off Current I -0.1 V =-4V 10 A EBO EB Collector-Emitter V -0.35 V I =-150mA, I =-15mA* CE(sat) C B Saturation Voltage 1 Base-Emitter V -1.1 V I =-150mA, I =-15mA* BE(sat) C B DC 1s Saturation Voltage 100ms 10ms 0.1 1ms Static Forward Current h 50 150 I =-150mA, V =-10V* FE C CE 100s Transfer Ratio 10 I =-1A, V =-10V* C CE Transition f 150 MHz I =-50mA, V =-10V 0.01 T C CE 0.1V 1V 10V 100V Frequency f=100MHz Output Capacitance C 25 pF V =-10V, f=1MHz obo CB VCE - Collector Emitter Voltage (V) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Safe Operating Area Spice parameter data is available upon request for this device 3 - 130 3 - 129