2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm AEC-Q101 Qualified (Note1). High emitter-base voltage: V = 25 V EBO High reverse h : Reverse h = 150 (typ.) (V = 2 V, I = 4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: h = 200 to 1200 FE Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 20 V CEO Emitter-base voltage V 25 V EBO JEDEC TO-236MOD Collector current I 300 mA C JEITA SC-59 Base current I 60 mA B TOSHIBA 2-3F1A P (Note 2, 4) 200 C Collector power dissipation mW Weight: 0.012 g (typ.) P (Note 3) 150 C T (Note 2) 150 j Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Marking Part No.(abbreviation code) h Rank FE C C A Start of commercial production 1982-12 2018 - 2021 1 2021-04-25 Toshiba Electronic Devices & Storage Corporation 2SC3326 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 A 0.1 A CBO CB E Emitter cut-off current I V = 25 V, I = 0 A 0.1 A EBO EB C h FE DC current gain V = 2 V, I = 4 mA 200 1200 CE C (Note) Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 0.042 0.1 V CE (sat) C B Base-emitter voltage V V = 2 V, I = 4 mA 0.61 V BE CE C Transition frequency f V = 6 V, I = 4 mA 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 4.8 7 pF ob CB E OUTPUT Turn-on time t 160 on INPUT 4 k 10 V Switching time Storage time t 500 ns stg 0 VCC = 12 V V 1 s BB = 3 V Fall time t 130 f Duty cycle 2% Note: hFE classification A: 200 to 700, B: 350 to 1200 2018 - 2021 2 2021-04-25 Toshiba Electronic Devices & Storage Corporation 50 3 k 1 k