X-On Electronics has gained recognition as a prominent supplier of TMBT3906,LM Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TMBT3906,LM Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TMBT3906,LM Toshiba

TMBT3906,LM electronic component of Toshiba
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Part No.TMBT3906,LM
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 150 mA 250MHz 320 mW Surface Mount SOT-23-3
Datasheet: TMBT3906,LM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1111 ea
Line Total: USD 0.11 
Availability - 8840
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8840
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1111
10 : USD 0.0748
100 : USD 0.033
1000 : USD 0.0297
3000 : USD 0.022
9000 : USD 0.0198
24000 : USD 0.0187
45000 : USD 0.0176
99000 : USD 0.0176

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TMBT3906,LM from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TMBT3906,LM and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TMBT3906 TOSHIBA Transistor Silicon PNP Epitaxial Type TMBT3906 Audio Frequency General Purpose Amplifier Applications High voltage and high current : V = 50 V, I = 200 mA (max) CEO C Complementary to TMBT3904 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 200 mA C Base current I 30 mA B 1. Base P 1) 320 mW C (Note 2. Emitter Collector power dissipation 3. Collector P ) 1000 mW C (Note 2 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg SOT23 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4mm x 25.4mm x 1.6mm, Cu Pad: 0.42mm x 3) Note 2: Mounted on an FR4 board. 2 (25.4mm x 25.4mm x 1.6mm, Cu Pad: 645mm ) Marking S W Start of commercial production 2015-01 2015-2018 2018-05-17 1 Toshiba Electronic Devices & Storage Corporation TMBT3906 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 mA 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 mA 0.1 A EBO EB C V = 1 V, I = 0.1 mA 60 CE C V = 1 V, I = 1 mA 80 CE C DC current gain h V = 1 V, I = 10 mA 100 300 FE CE C V = 1 V, I = 50 mA 60 CE C V = 1 V, I = 100 mA 30 CE C = 10 mA, I = 1 mA 0.25 IC B Collector-emitter saturation voltage V V CE (sat) I = 50 mA, I = 5 mA 0.40 C B 0.85 I = 10 mA, I = 1 mA C B Base-emitter saturation voltage V V BE (sat) 0.95 I = 50 mA, I = 5 mA C B Transition frequency f V = 20 V, I = 10 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0 mA, f = 1 MHz 4 7 pF ob CB E V = 5 V, I = 0.1 mA, CE C Noise figure NF 4 dB f = 1 kHz, Rg = 1 k , delay time td OUTPUT 35 INPUT 2.5 k rise time tr 35 0 Switching times ns V -5 V CC storage time ts 200 = -3 V 500 s V BB = 1.9 V fall time tf 50 I = -10mA, I = -I = -1mA C B1 B2 2015-2018 2018-05-17 2 Toshiba Electronic Devices & Storage Corporation 56 3.9 k 270

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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