T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK High Speed Switching Applications ESD protected gate Low ON-resistance R = 2.8 (typ.) ( V = 10 V) DS(on) GS R = 3.1 (typ.) ( V = 5 V) DS(on) GS R = 3.2 (typ.) ( V = 4.5 V) DS(on) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1. Gate 2. Source Drainsource voltage V 60 V DSS 3. Drain Gatesource voltage V 20 V GSS DC I 200 SOT23 D Drain current (Note1) mA Pulse I (Note 2) 760 DP P (Note 3) 320 mW D Power dissipation P (Note 4) 1000 D Channel temperature T 150 C ch Storage temperature T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: Pulse width 10 s, Duty 1% Note 3: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.42 mm x 3) Note 4: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 3 3 N J 1 2 1 2 Start of commercial production 2015-01 1 2015-04-01 T2N7002AK Electrical Characteristics (Ta = 25C, Otherwise specified) Characteristic Symbol Test Condition Min Typ. Max Unit Drain-source breakdown voltage V I = 250 A, V = 0 V 60 V (BR) DSS D GS V = 60 V, V = 0 V 1 DS GS Drain cutoff current I A DSS 200 V = 60 V, V = 0 V, Tj=150 C DS GS V = 16 V, V = 0 V 2 GS DS Gate leakage current I V = 10 V, V = 0 V 0.5 A GSS GS DS V = 5 V, V = 0 V 0.1 GS DS 1.1 2.1 Gate threshold voltage V I = 250 A, V = V V th D DS GS Forward transfer admittance Y V = 10 V, I = 200 mA (Note 5) 450 mS fs DS D I = 100 mA, V = 10 V 2.8 3.9 D GS R I = 100 mA, V = 10 V, Tj=150 C 5.4 8.1 D GS DS (ON) Drain-source ON-resistance (Note 5) 3.1 4.4 I = 100 mA, V = 5 V D GS I = 100 mA, V = 4.5 V 3.2 4.7 D GS Total Gate Charge Q 0.27 0.35 G(tot) V = 30 V, I = 200 mA DS D Gate-Source Charge Q 0.08 nC GS V = 4.5 V GS Gate-Drain Charge 0.08 Q GD Input capacitance C 11 17 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 3 pF oss DS GS Reverse transfer capacitance C 0.7 rss 2 4 Turn-on delay time t d(on) Rise time t 3 Switching V = 40 V, I = 160 mA r DD D ns time Turn-off delay time t V = 0 V to 10 V, R = 50 7 14 GS G d(off) Fall time t 24 f -0.87 -1.2 Drain-source forward voltage V I = -115 mA, V = 0 V (Note 5) V DSF D GS Note 5: Pulse test 2 2015-04-01