X-On Electronics has gained recognition as a prominent supplier of ALD1102APAL MOSFETs across the USA, India, Europe, Australia, and various other global locations. ALD1102APAL MOSFETs are a product manufactured by Advanced Linear Devices. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ALD1102APAL Advanced Linear Devices

ALD1102APAL electronic component of Advanced Linear Devices
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Part No.ALD1102APAL
Manufacturer: Advanced Linear Devices
Category: MOSFETs
Description: MOSFET Dual P-Channel Pair
Datasheet: ALD1102APAL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 8.954 ea
Line Total: USD 447.7 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 50
Multiples : 50
50 : USD 8.954
100 : USD 8.514
250 : USD 8.239
500 : USD 7.843
1000 : USD 7.491
2500 : USD 7.194

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ALD1102APAL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ALD1102APAL and other electronic components in the MOSFETs category and beyond.

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ADVANCED LINEAR ALD1102A/ALD1102B DEVICES, INC. ALD1102 DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1102 is a monolithic dual P-channel matched transistor pair Precision current mirrors intended for a broad range of analog applications. These enhancement- Precision current sources mode transistors are manufactured with Advanced Linear Devices en- Analog switches hanced ACMOS silicon gate CMOS process. Choppers Differential amplifier input stage The ALD1102 offers high input impedance and negative current tempera- Voltage comparator ture coefficient. The transistor pair is matched for minimum offset voltage Data converters and differential thermal response, and it is designed for switching and Sample and Hold amplifying applications in -2V to -10V systems where low input bias Analog inverter current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used with an ALD1101, a dual CMOS analog switch can be constructed. In addition, the ALD1102 is intended as a building block for differential PIN CONFIGURATION amplifier input stages, transmission gates, and multiplexer applications. The ALD1102 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. SOURCE 1 8 SUBSTRATE 1 The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. GATE 2 7 SOURCE 1 2 The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the DRAIN 3 6 GATE 1 2 device at a drain current of 5mA at 25C is = 5mA/50pA = 100,000,000. IC 4 5 DRAIN 2 TOP VIEW SAL, PAL PACKAGES FEATURES * IC pin is internally connected. Do not connect externally. Low threshold voltage of 0.7V Low input capacitance Low Vos grades -- 2mV, 5mV, 10mV 12 High input impedance -- 10 typical Low input and output leakage currents Negative current (I ) temperature coefficient DS Enhancement-mode (normally off) 9 BLOCK DIAGRAM DC current gain 10 RoHS compliant GATE 1 (2) ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) Operating Temperature Range* DRAIN 1 (3) SOURCE 1 (1) 0C to +70C0C to +70C SUBSTRATE (8) 8-Pin 8-Pin DRAIN 2 (5) SOURCE 2 (7) SOIC Plastic Dip Package Package ALD1102ASAL ALD1102APAL GATE 2 (6) ALD1102BSAL ALD1102BPAL ALD1102SAL ALD1102PAL * Contact factory for high temperature versions. 2021 Advanced Linear Devices, Inc., Vers. 2.2 www.aldinc.com 1 of 7ABSOLUTE MAXIMUM RATINGS Drain-source voltage, V -10V DS Gate-source voltage, V -10V GS Power dissipation 500mW Operating temperature range SAL, PAL packages 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS T = 25C unless otherwise specified A ALD1102A ALD1102B ALD1102 Test Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Conditions Gate Threshold Voltage V -0.4 -0.7 -1.2 -0.4 -0.7 -1.2 -0.4 -0.7 -1.2 V I = -10A V = V T DS GS DS Offset Voltage V 2 5 10 mV I = -100A V = V OS DS GS DS V - V GS1 GS2 Gate Threshold TC -1.3 -1.3 -1.3 mV/C VT Temperature Drift On Drain Current I -8 -16 -8 -16 -8 -16 mA V = V = -5V DS(ON) GS DS Transconductance G 2 4 2 4 2 4 mmho V = -5V I = -10mA fs DS DS Mismatch G 0.5 0.5 0.5 % fs Output G 500 500 500 mho V = -5V I = -10mA OS DS DS Conductance Drain Source R 180 270 180 270 180 270 V = -0.1V V = -5V DS(ON) DS GS ON Resistance Drain Source ON Resistance R 0.5 0.5 0.5 % V = -0.1V V = -5V DS(ON) DS GS Mismatch Drain Source Breakdown BV -10 -10 -10 V I = -10A V = 0V DSS DS GS Voltage Off Drain Current I 0.1 4 0.1 4 0.1 4 nA V = -10V V = 0V DS(OFF) DS GS 44 4 AT = 125C A Gate Leakage I 1 100 1 100 1 100 pA V = 0V V = -10V GSS DS GS Current 10 10 10 nA T = 125C A Input C 610 6 10 6 10 pF ISS Capacitance ALD1102A/ALD1102B/ALD1102 Advanced Linear Devices 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Advanced Linear Devices Inc.
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