JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB5 5N03 N-Channel Power MOSFET R MAX I V DS(on) D (BR)DSS PDFNWB3.33.3-8L 10 V 5.5 m 3 0 V 55A 9.5m 4.5V DESCRIPTION The CJAB55N03 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in a DS(ON) wide variety of applications FEATURES Battery switch Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R Special process technology for high ESD DS(ON) Fully characterized avalanche voltage and capability current APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAB55N03 = Part No. CJAB Solid dot=Pin1 indicator 55N03 XX XX=Date Code 1 2 3 4 S S S G ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS Continuous Drain Current I 55 D A Pulsed Drain Current I 2 2 0 DM Maximum Power Dissipation P 1.5 W D Single Pulsed Avalanche Energy E 420 mJ AS R 83.3 Thermal Resistance from Junction to Ambient JA /W Junction Temperature T 150 J Storage Temperature T -55~ +150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10s) T L 260 Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250uA 30 V 1 Zero gate voltage drain current I VDS =24V, VGS =0V A DSS Gate-body leakage current I VDS =0V, VGS =20V 100 nA GSS On characteristics Gate-threshold voltage VGS(th) VDS =V , ID =250uA 1.0 1.5 2.5 V GS VGS =10V, ID =20A m 5.5 3.6 Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =20A m 5.9 9.5 Forward transconductance g VDS =10V, ID =20A S FS 24 Dynamic characteristics 925 Input capacitance C 1850 2405 iss VDS =15V,VGS =0V, 160 Output capacitance C 320 416 pF oss f =100KHz 144 Reverse transfer capacitance C 291 379 rss Switching characteristics Total gate charge Q 47 g V =10V, GS nC Gate-source charge Q 3.9 gs V =25V, I =14A DS D Gate-drain charge Q gd 16 Turn-on delay time td (on) 12 Turn-on rise time tr 36 V =15V,RL=0.75, DS ns Turn-off delay time td(off) V =10V,R =3 49 GS G Turn-off fall time tf 12 Drain-Source Diode Characteristics Drain-source diode forward voltage V 1.2 V SD VGS =0V, I =20A S Continuous drain-source diode forward current I 55 A S Pulsed drain-source diode forward current I 220 A SM Notes: 1.7 Limited only by maximum temperature allowed. & 2.P 10s, Duty cycle1%. W 3.EAS condition: V =15V,V =10V, L=0.1mH, Rg=25 Starting T = 25. DD GS J 4.Pulse Test : Pulse Width300s, duty cycle 2%. 5.Guaranteed by design, not subject to production. The value of R is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air 6. JA environment T =25 . with a Rev. - 1.0 www.jscj-elec.com 2