X-On Electronics has gained recognition as a prominent supplier of NTTFS4928NTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTTFS4928NTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTTFS4928NTAG ON Semiconductor

NTTFS4928NTAG electronic component of ON Semiconductor
NTTFS4928NTAG ON Semiconductor
NTTFS4928NTAG MOSFETs
NTTFS4928NTAG  Semiconductors

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See Product Specifications
Part No. NTTFS4928NTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet: NTTFS4928NTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
463: USD 0.1404 ea
Line Total: USD 65.01 
Availability - 0
MOQ: 463  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 463
Multiples : 1
463 : USD 0.1404

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 1500
Multiples : 1500
1500 : USD 0.298
3000 : USD 0.2593
7500 : USD 0.2414
10500 : USD 0.2325
37500 : USD 0.2236

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.6921

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.6921

0
Ship by Mon. 14 Apr to Thu. 17 Apr
MOQ : 1
Multiples : 1
1 : USD 0.876
10 : USD 0.855
30 : USD 0.8416
100 : USD 0.8263

0
Ship by Thu. 03 Apr to Mon. 07 Apr
MOQ : 1
Multiples : 1
1 : USD 1.5793
10 : USD 0.7652
100 : USD 0.4261
500 : USD 0.3369
1000 : USD 0.2697
1500 : USD 0.2437

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 54
Multiples : 1
54 : USD 0.1085
100 : USD 0.102

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.2397

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 38
Multiples : 38
38 : USD 0.1594
100 : USD 0.1504
250 : USD 0.1474

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the NTTFS4928NTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTTFS4928NTAG and other electronic components in the MOSFETs category and beyond.

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NTTFS4928N MOSFET Power, Single, N-Channel, 8FL 30 V, 37 A Features NTTFS4928N MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche Energy E 20 mJ AS (T = 25C, V = 50 V, V = 10 V, J DD GS I = 20 A , L = 0.1 mH, R = 25 ) L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) 6 C/W R JC JunctiontoAmbient Steady State (Note 3) R 59.1 JA JunctiontoAmbient Steady State (Note 4) R 154.5 JA JunctiontoAmbient (t 10 s) (Note 3) R 32.4 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2 4. Surfacemounted on FR4 board using the minimum recommended pad size (40 mm , 1 oz. Cu). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 24 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 1.6 2.2 V GS(TH) GS DS D Negative Threshold Temperature V /T 3.7 mV/C GS(TH) J Coefficient DraintoSource On Resistance R I = 20 A 5.4 9.0 m DS(on) D V = 10 V GS I = 10 A 5.3 D I = 20 A 8.9 13.5 D V = 4.5 V GS I = 10 A 8.5 D Forward Transconductance g V = 1.5 V, I = 15 A 40 S FS DS D CHARGES AND CAPACITANCES pF Input Capacitance C 913 iss Output Capacitance C 366 V = 0 V, f = 1.0 MHz, V = 15 V oss GS DS Reverse Transfer Capacitance C 108 rss Total Gate Charge Q 8.0 nC G(TOT) Threshold Gate Charge Q 1.6 G(TH) V = 4.5 V, V = 15 V, I = 20 A GS DS D GatetoSource Charge Q 3.1 GS GatetoDrain Charge Q 3.1 GD 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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