NTTFS4941NTAG ON Semiconductor

NTTFS4941N Power MOSFET 30 V, 46 A, Single NChannel, 8FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTTFS4941N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 4.9 C/W JC JunctiontoAmbient Steady State (Note 3) R 57 JA JunctiontoAmbient Steady State (Note 4) R 148 JA JunctiontoAmbient (t 10 s) (Note 3) R 28.3 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2 4. Surfacemounted on FR4 board using the minimum recommended pad size (40 mm , 1 oz. Cu). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.2 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.3 mV/C GS(TH) J Coefficient DraintoSource On Resistance R I = 20 A 4.8 6.2 m DS(on) D V = 10 V GS I = 10 A 4.8 D I = 20 A 7.0 9.0 D V = 4.5 V GS I = 10 A 7.0 D Forward Transconductance g V = 1.5 V, I = 15 A 33 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1619 pF iss Output Capacitance C 573 V = 0 V, f = 1.0 MHz, V = 15 V oss GS DS Reverse Transfer Capacitance C 18 rss Total Gate Charge Q 10.1 nC G(TOT) Threshold Gate Charge Q 2.6 G(TH) V = 4.5 V, V = 15 V, I = 20 A GS DS D GatetoSource Charge Q 4.9 GS GatetoDrain Charge Q 1.3 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 20 A 22.8 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 21 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G Turn Off Delay Time t 19 d(off) Fall Time t 3.0 f 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.