NTTFS4965NFTAG ON Semiconductor

NTTFS4965NF Power MOSFET 30 V, 64 A, Single NChannel, WDFN8 Features Integrated Schottky Diode Low R to Minimize Conduction Losses DS(on) NTTFS4965NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W Junction toCase (Drain) R 5.5 JC JunctiontoAmbient Steady State (Note 3) R 46.4 JA JunctiontoAmbient Steady State (Note 4) R 84.8 JA JunctiontoAmbient (t 10 s) (Note 3) R 21.4 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu. 2 4. Surfacemounted on FR4 board using the minimum recommended pad size of 90 mm . ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, 500 A DSS GS T = 25C J V = 24 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 1.6 2.3 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.2 mV/C GS(TH) J Coefficient DraintoSource On Resistance R I = 20 A 2.8 3.5 m DS(on) D V = 10 V GS I = 10 A 2.8 D I = 20 A 4.16 5.2 D V = 4.5 V GS I = 10 A 4.13 D Forward Transconductance g V = 1.5 V, I = 10 A 34 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 2075 pF iss Output Capacitance C 876 oss V = 0 V, f = 1.0 MHz, V = 15 V GS DS Reverse Transfer Capacitance C 46 rss Total Gate Charge Q 13.6 nC G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 4.5 V, V = 15 V, I = 20 A GS DS D GatetoSource Charge Q 5.8 GS GatetoDrain Charge Q 4.1 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 20 A 29.4 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 24 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G Turn Off Delay Time t 20 d(off) Fall Time t 5.4 f TurnOn Delay Time t 8.5 ns d(on) Rise Time t 24 r V = 10 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G Turn Off Delay Time t 25 d(off) Fall Time t 4.0 f 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.