X-On Electronics has gained recognition as a prominent supplier of DMT8012LK3-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT8012LK3-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMT8012LK3-13 Diodes Incorporated

DMT8012LK3-13 electronic component of Diodes Incorporated
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Part No.DMT8012LK3-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A
Datasheet: DMT8012LK3-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6634 ea
Line Total: USD 0.66 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2423
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.891
10 : USD 0.7942
100 : USD 0.5786
500 : USD 0.4642
1000 : USD 0.4268
2500 : USD 0.3993
5000 : USD 0.3751

   
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RoHS - XON
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We are delighted to provide the DMT8012LK3-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT8012LK3-13 and other electronic components in the MOSFETs category and beyond.

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The DMT8012LK3-13 is an N-channel enhancement mode field effect transistor (FET) manufactured by Diodes Incorporated. It has an operating voltage range of up to 80V and a gate-source voltage of 20V and a current capacity of up to 80A. It is suitable for high-frequency switching and power management applications. It delivers excellent thermal and electrical performance and is ideal for applications where current ratings, level shifting, and/or voltage isolation are needed.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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