SI2102 Features Leading Trench Technology for Low R DS(on) High Speed Switching Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C SOT-323 Thermal Resistance: 625C/W Junction to Ambient Parameter Symbol Rating Unit A Drain-Source Voltage V 20 V DS D Gate-Source Volltage V 8 V GS 3 Continuous Drain Current I 2.1 A C D B 1 2 Pulsed Drain Current I 4 A DM F E Total Power Dissipation P 0.2 W D H J G Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, K <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. L DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 B D C 0.083 0.096 2.10 2.45 D 0.026 0.65 TYP. 1. GATE E 0.047 0.055 1.20 1.40 2. SOURCE F 0.012 0.016 0.30 0.40 3. DRAIN G G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 Marking: TS2 S J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMSI2102 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =10A Drain-Source Breakdown Voltage 20 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =8V 100 nA GSS DS GS I V =20V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS Gate-Threshold Voltage V V =V , I =50A 0.6 0.9 1.2 V GS(th) DS GS D V =4.5V, I =3.6A 50 60 GS D (Note 2) R m Drain-Source On-Resistance DS(on) V =2.5V, I =3.1A 60 110 GS D V V =0V, I =0.94A V Diode Forward Voltage 1.2 SD GS S (Note 2) g V =5V, I =3.6A 8 S Forward Tranconductance FS DS D (Note 3) Dynamic Characteristics Input Capacitance C 300 iss C V =10V,V =0V,f=1MHz pF Output Capacitance 120 oss DS GS Reverse Transfer Capacitance C 80 rss Q Total Gate Charge 4 10 g V =10V,V =4.5V,I =3.6A Q nC Gate-Source Charge DS GS D 0.65 gs Q Gate-Drain Charge 1.5 gd t 15 Turn-On Delay Time 7 d(on) V =10V, DD t Turn-On Rise Time 55 80 r R =5.5, I 3.6A, ns L D t 60 Turn-Off Delay Time 16 d(off) V =4.5V,R =6 GEN g Turn-Off Fall Time t 10 20 f Note 2. Pulse Test : Pulse Width 300s, Duty Cycle 2%. 3. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM