X-On Electronics has gained recognition as a prominent supplier of FCMT125N65S3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCMT125N65S3 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCMT125N65S3 ON Semiconductor

Name: FCMT125N65S3
Brand: ON Semiconductor
SKU: FCMT125N65S3_ON Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

FCMT125N65S3 electronic component of ON Semiconductor

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Part No.	FCMT125N65S3
Manufacturer:	ON Semiconductor
Category:	MOSFETs
Description:	MOSFET SF3 650V 125MOHM MO SFET
Datasheet:	FCMT125N65S3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.048 ea
Line Total: USD 6.05

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

FCMT125N65S3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 1 Multiples : 1	1 : USD 6.048 10 : USD 5.3223 30 : USD 4.8909 100 : USD 4.1314 500 : USD 3.9289 1000 : USD 3.8389

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 5.2531 10 : USD 3.4394 25 : USD 3.2589 100 : USD 2.8177 500 : USD 2.4066 1000 : USD 2.1058 3000 : USD 2.0255

We are delighted to provide the FCMT125N65S3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCMT125N65S3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The FCMT125N65S3 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by ON Semiconductor. It is a 650V Surface Mount High Side MOSFET with a RDS(on) (drain-to-source resistance) of 125mOhms. This device is capable of operating at up to 250 kHz and features an ultra-low Qg (gate charge). This allows for fast switching to meet demanding requirements in applications such as motor drives and consumer electronics. The FCMT125N65S3 is already integrated into several devices, such as power supplies and power converters, allowing them to control high current levels with minimal power loss. With its low gate charge, this MOSFET is perfect for any application where fast switching and efficient operation are essential.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Aptina / ON Semiconductor may also be referenced as

FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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Manufacturer ON Semiconductor ON Semiconductor
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 24 A 24 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 125 mOhms 125 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 181 W 181 W
Mounting Style Smd/Smt Smd/Smt
Package / Case PQFN - 4 PQFN - 4
Packaging Cut Tape Cut Tape
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 49 nC 49 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand On Semiconductor On Semiconductor
Forward Transconductance - Min 16 S 16 S
Fall Time 5.8 ns 5.8 ns
Product Type Mosfet Mosfet
Rise Time 22 ns 22 ns
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 60 ns 60 ns
Typical Turn-On Delay Time 22 ns 22 ns