MOSFET Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 10 A, 360 m FCMT360N65S3 www.onsemi.com General Description SuperFET III MOSFET is ON Semiconductors brandnew high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 360 m 10 V 10 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easydrive series helps D manage EMI issues and allows for easier design implementation. The Power88 package is an ultraslim surfacemount package S1 : Driver Source S2 : Power Source 2 (1mm high) with a low profile and small footprint (8x8 mm ). SuperFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and G separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). S1 S2 Features N-CHANNEL MOSFET 700 V T = 150C J Typ R = 310 m DS(on) Ultra Low Gate Charge (Typ. Q = 18 nC) g Low Effective Output Capacitance (Typ. C = 173 pF) oss(eff.) S2 S2 100% Avalanche Tested S1 G These Devices are PbFree and are RoHS Compliant PQFN4 8X8 2P CASE 483AP Applications Computing / Display Power Supplies Telecom / Server Power Supplies MARKING DIAGRAM Industrial Power Supplies Lighting / Charger / Adapter &Z&3&K FCMT 360N65S3 &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCMT360N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: February, 2020 Rev. 1 FCMT360N65S3/DFCMT360N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 10 A D C Continuous (T = 100C) 6 C I Drain Current Pulsed (Note 1) 25 A DM E Single Pulsed Avalanche Energy (Note 2) 40 mJ AS I Avalanche Current (Note 1) 2.1 A AS E Repetitive Avalanche Energy (Note 1) 0.83 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 83 W D C Derate Above 25C 0.67 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 2.1 A, R = 25 starting T = 25C AS G J 3. I 5 A, di/dt 200 A/ s, V 400 V, starting T = 25C SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 1.5 C/W JC R Thermal Resistance, Junction to Ambient, Max. (Note 4) 45 JA 2 4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR4 material. ORDERING INFORMATION Device Marking Package Reel Size Tape Width Quantity FCMT360N65S3 FCMT360N65S3 PQFN8 13 13.3 mm 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2