X-On Electronics has gained recognition as a prominent supplier of FCMT360N65S3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCMT360N65S3 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCMT360N65S3 ON Semiconductor

FCMT360N65S3 electronic component of ON Semiconductor
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Part No.FCMT360N65S3
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Easy Drive 650V 10A 360 mOhm
Datasheet: FCMT360N65S3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 2.4089 ea
Line Total: USD 7226.7 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 3.9478

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 2.4089

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 7.56
10 : USD 2.734
25 : USD 2.5787
100 : USD 2.1955
500 : USD 1.802
1000 : USD 1.4913
3000 : USD 1.4499

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the FCMT360N65S3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCMT360N65S3 and other electronic components in the MOSFETs category and beyond.

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MOSFET Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 10 A, 360 m FCMT360N65S3 www.onsemi.com General Description SuperFET III MOSFET is ON Semiconductors brandnew high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 360 m 10 V 10 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easydrive series helps D manage EMI issues and allows for easier design implementation. The Power88 package is an ultraslim surfacemount package S1 : Driver Source S2 : Power Source 2 (1mm high) with a low profile and small footprint (8x8 mm ). SuperFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and G separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). S1 S2 Features N-CHANNEL MOSFET 700 V T = 150C J Typ R = 310 m DS(on) Ultra Low Gate Charge (Typ. Q = 18 nC) g Low Effective Output Capacitance (Typ. C = 173 pF) oss(eff.) S2 S2 100% Avalanche Tested S1 G These Devices are PbFree and are RoHS Compliant PQFN4 8X8 2P CASE 483AP Applications Computing / Display Power Supplies Telecom / Server Power Supplies MARKING DIAGRAM Industrial Power Supplies Lighting / Charger / Adapter &Z&3&K FCMT 360N65S3 &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCMT360N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: February, 2020 Rev. 1 FCMT360N65S3/DFCMT360N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 10 A D C Continuous (T = 100C) 6 C I Drain Current Pulsed (Note 1) 25 A DM E Single Pulsed Avalanche Energy (Note 2) 40 mJ AS I Avalanche Current (Note 1) 2.1 A AS E Repetitive Avalanche Energy (Note 1) 0.83 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 83 W D C Derate Above 25C 0.67 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 2.1 A, R = 25 starting T = 25C AS G J 3. I 5 A, di/dt 200 A/ s, V 400 V, starting T = 25C SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 1.5 C/W JC R Thermal Resistance, Junction to Ambient, Max. (Note 4) 45 JA 2 4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR4 material. ORDERING INFORMATION Device Marking Package Reel Size Tape Width Quantity FCMT360N65S3 FCMT360N65S3 PQFN8 13 13.3 mm 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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