FCP067N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 44 A, 67 m www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductors brand new high V R MAX I MAX DSS DS(ON) D voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate 650 V 67 m 10 V 44 A charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and D withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features G 700 V T = 150C J Typ. R = 59 m DS(on) S Ultra Low Gate Charge (Typ. Q = 78 nC) g POWER MOSFET Low Effective Output Capacitance (Typ. C = 715 pF) oss(eff.) 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications G Telecom / Server Power Supplies D S Industrial Power Supplies TO220 CASE 340AT UPS / Solar MARKING DIAGRAM Y&Z&3&K FCP 067N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCP067N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 FCP067N65S3/DFCP067N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter FCP067N65S3 Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 44 A D C Continuous (T = 100C) 28 C I Drain Current Pulsed (Note 1) 110 A DM E Single Pulsed Avalanche Energy (Note 2) 214 mJ AS I Avalanche Current (Note 2) 4.8 A AS E Repetitive Avalanche Energy (Note 1) 3.12 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 312 W D C Derate Above 25C 2.5 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. I = 4.8 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 22 A, di/dt 200 A/ s, V 380 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter FCP067N65S3 Unit R Thermal Resistance, Junction to Case, Max. 0.4 C/W JC R Thermal Resistance, Junction to Ambient, Max. 62.5 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCP067N65S3 FCP067N65S3 TO220 Tube N/A N/A 50 Units www.onsemi.com 2