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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP104N60 N-Channel SuperFET II MOSFET June 2014 FCP104N60 N-Channel SuperFET II MOSFET 600 V, 37 A, 104 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 96 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 63 nC) g and lower gate charge performance. This advanced technology Low Effective Output Capacitance (Typ. C = 280 pF) oss(eff.) is tailored to minimize conduction loss, provide superior 100% Avalanche Tested switching performance, and withstand extreme dv/dt rate and RoHS Compliant higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system Applications miniaturization and higher efficiency. Telecom / Sever Power Supplies Industrial Power Supplies D G G D S TO-220 S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP104N60 Unit V Drain to Source Voltage 600 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 37 C I Drain Current A D o - Continuous (T = 100 C) 24 C I Drain Current - Pulsed (Note 1) 111 A DM E Single Pulsed Avalanche Energy (Note 2) 809 mJ AS I Avalanche Current (Note 1) 6.8 A AR E Repetitive Avalanche Energy (Note 1) 3.57 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 357 W C P Power Dissipation D o o - Derate Above 25C2.85W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FCP104N60 Unit R Thermal Resistance, Junction to Case, Max. 0.35 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 40 JA 1 www.fairchildsemi.com 2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0