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FCP130N60 N-Channel SuperFET II MOSFET September 2014 FCP130N60 N-Channel SuperFET II MOSFET 600 V, 28 A, 130 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 112 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 54 nC) g and lower gate charge performance. This advanced technology Low Effective Output Capacitance (Typ. C = 240 pF) is tailored to minimize conduction loss, provide superior switch- oss(eff.) ing performance, and withstand extreme dv/dt rate and higher 100% Avalanche Tested avalanche energy. Consequently, SuperFET II MOSFET is suit- RoHS Compliant able for various AC/DC power conversion for system miniatur- ization and higher efficiency. Applications Telecom / Sever Power Supplies Industrial Power Supplies D G G D S TO-220 S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP130N60 Unit V Drain to Source Voltage 600 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 28 C I Drain Current A D o - Continuous (T = 100 C) 18 C I Drain Current - Pulsed (Note 1) 84 A DM E Single Pulsed Avalanche Energy (Note 2) 720 mJ AS I Avalanche Current (Note 1) 6 A AR E Repetitive Avalanche Energy (Note 1) 2.78 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 278 W C P Power Dissipation D o o - Derate Above 25C2.2W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering,1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FCP130N60 Unit R Thermal Resistance, Junction to Case, Max. 0.45 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 40 JA 2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP130N60 Rev. C1