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Rds(on)=0.32 family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge Low effective output capacitance (typ. Coss.eff=95pF) performance. This technology is tailored to minimize 100% avalanche tested conduction loss, provide superior switch-ing performance, RoHS Compliant dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G G D G S D TO-220F TO-220 S S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FCP11N60 FCPF11N60 Units I - Continuous (T = 25C) Drain Current 11 11* A D C - Continuous (T = 100C) 77* A C I Drain Current - Pulsed (Note 1) 33 33* A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 340 mJ AS I Avalanche Current (Note 1) 11 A AR E Repetitive Avalanche Energy (Note 1) 12.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 125 36 W D C - Derate above 25C 1.0 0.29 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction termperature Thermal Characteristics Symbol Parameter FCP11N60 FCPF11N60 Units R Thermal Resistance, Junction-to-Case 1.0 3.5 C/W JC R Thermal Resistance, Case-to-Sink 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W JA 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP11N60/FCPF11N60 Rev. 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