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FCPF11N60F N-Channel SuperFET FRFET MOSFET November 2013 FCPF11N60F N-Channel SuperFET FRFET MOSFET 600 V, 11 A, 380 m Features Description 600 V T = 150C SuperFET MOSFET is Fairchild Semiconductors first genera- J tion of high voltage super-junction (SJ) MOSFET family that is Typ. R = 320 m DS(on) utilizing charge balance technology for outstanding low on- Fast Recovery Type (t = 120 ns) rr resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch- Ultra Low Gate Charge (Typ. Q = 40 nC) g ing performance, dv/dt rate and higher avalanche energy. Con- Low Effective Output Capacitance (Typ. C = 95 pF) oss(eff.) sequently, SuperFET MOSFET is very suitable for the switching 100% Avalanche Tested power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super- RoHS compliant FET FRFET MOSFETs optimized body diode reverse recov- ery performance can remove additional component and Applications improve system reliability. LCD/LED/PDP TV Solar Inverter Lighting AC-DC Power Supply D G G D S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCPF11N60F Unit V Drain to Source Voltage 600 V DSS o - Continuous (T = 25 C) 11* C I Drain Current A D o - Continuous (T = 100 C) 7* C I Drain Current - Pulsed (Note 1) 33* A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 340 mJ AS I Avalanche Current (Note 1) 11 A AR E Repetitive Avalanche Energy (Note 1) 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 36 W C P Power Dissipation D o o - Derate Above 25C0.29 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter Unit FCPF11N60F o R Thermal Resistance, Junction to Case, Max. 3.5 C/W JC o R Thermal Resistance, Junction to Ambient, Max. 62.5 C/W JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCPF11N60F Rev. C1