X-On Electronics has gained recognition as a prominent supplier of FCPF190N60E_F152 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCPF190N60E_F152 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCPF190N60E_F152 ON Semiconductor

FCPF190N60E_F152 electronic component of ON Semiconductor
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Part No.FCPF190N60E_F152
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET 650V, 190mOhm SuperFET II MOSFET
Datasheet: FCPF190N60E_F152 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
18: USD 4.5304 ea
Line Total: USD 81.55 
Availability - 0
MOQ: 18  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 18
Multiples : 1
18 : USD 4.5304
25 : USD 4.4839
50 : USD 4.3594
100 : USD 4.0146

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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FCPF190N60E F152 N-Channel MOSFET July 2013 FCPF190N60E F152 N-Channel SuperFET II MOSFET 600 V, 20.6 A, 190 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductor s first gener- J ation of high voltage super-junction (SJ) MOSFET family that is Max. R = 190 m DS(on) utilizing charge balance technology for outstanding low on-resis- Ultra Low Gate Charge (Typ. Q = 63 nC) tance and lower gate charge performance. This advanced tech- g nology is tailored to minimize conduction loss, provide superior Low Effective Output Capacitance (Typ. C .eff = 178 pF) oss switching performance, and withstand extreme dv/dt rate and 100% Avalanche Tested higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system minia- turization and higher efficiency. Aplications LCD / LED / PDP TV Lighting Solar Inverter AC-DC Power Supply D G TO-220F G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FCPF190N60E F152 Unit V Drain to Source Voltage 600 V DSS - DC 20 V V Gate to Source Voltage GSS - AC (f > 1 Hz) 30 V o -Continuous (T = 25 C) 20.6* C I Drain Current A D o -Continuous (T = 100 C) 13.1* C I Drain Current - Pulsed (Note 1) 61.8* A DM E Single Pulsed Avalanche Energy (Note 2) 400 mJ AS I Avalanche Current (Note 1) 4.0 A AR E Repetitive Avalanche Energy (Note 1) 2.1 mJ AR Peak Diode Recovery dv/dt (Note 3) 20 dv/dt V/ns MOSFET dv/dt 100 o (T = 25 C) 39 W C P Power Dissipation D o o - Derate above 25C0.31W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FCPF190N60E F152 R Thermal Resistance, Junction to Case 3.2 JC o R Thermal Resistance, Case to Heat Sink (Typical) 0.5 C/W CS R Thermal Resistance, Junction to Ambient 62.5 JA 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCPF190N60E F152 Rev. C0 FCPF190N60E F152 N-Channel MOSFET Package Marking and Ordering Information Device Marking Device Package Eco Status Packaging Type Quantity FCPF190N60E FCPF190N60E F152 TO-220F Green Tube 50 For Fairchild s definition ofgree Eco Status, please visit:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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