X-On Electronics has gained recognition as a prominent supplier of FCPF190N65S3L1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCPF190N65S3L1 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCPF190N65S3L1 ON Semiconductor

FCPF190N65S3L1 electronic component of ON Semiconductor
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Part No.FCPF190N65S3L1
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
Datasheet: FCPF190N65S3L1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1
1000 : USD 0.836
10000 : USD 0.7992
100000 : USD 0.7832
N/A

Obsolete
0

Multiples : 1000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7035
10 : USD 0.5852
30 : USD 0.5272
100 : USD 0.469
500 : USD 0.4334
1000 : USD 0.4146
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.968
10 : USD 1.7928
25 : USD 1.7172
100 : USD 1.4796
500 : USD 1.2528
1000 : USD 1.0573
2000 : USD 1.0282
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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Forward Transconductance - Min
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We are delighted to provide the FCPF190N65S3L1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCPF190N65S3L1 and other electronic components in the MOSFETs category and beyond.

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FCPF190N65S3L1 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 14 A, 190 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 190 m 10 V 14 A conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps D manage EMI issues and allows for easier design implementation. Features 700 V T = 150C J G Typ. R = 165 m DS(on) Ultra Low Gate Charge (Typ. Q = 30 nC) g Low Effective Output Capacitance (Typ. C = 277 pF) oss(eff.) S 100% Avalanche Tested POWER MOSFET These Devices are PbFree and are RoHS Compliant Applications Computing / Display Power Supplies Telecom / Server Power Supplies G D S Industrial Power Supplies TO220F Lighting / Charger / Adapter CASE 340BF MARKING DIAGRAM Y&Z&3&K FCPF 190N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCPF190N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 FCPF190N65S3L1/DFCPF190N65S3L1 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 14* A D C Continuous (T = 100C) 9* C I Drain Current Pulsed (Note 1) 35* A DM E Single Pulsed Avalanche Energy (Note 2) 76 mJ AS I Avalanche Current (Note 2) 2.5 A AS E Repetitive Avalanche Energy (Note 1) 0.33 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 33 W D C Derate Above 25C 0.27 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 2.5 A, R = 25 , starting T = 25C. AS G J 3. I 7 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 3.76 C/W JC R Thermal Resistance, Junction to Ambient, Max. 62.5 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCPF190N65S3L1 FCPF190N65S3 TO220F Tube N/A N/A 50 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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