X-On Electronics has gained recognition as a prominent supplier of FCP099N65S3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCP099N65S3 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCP099N65S3 ON Semiconductor

FCP099N65S3 electronic component of ON Semiconductor
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Part No.FCP099N65S3
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SuperFET3 650V 99 mOhm,TO220 PKG
Datasheet: FCP099N65S3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.885 ea
Line Total: USD 6.88 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 6.4376
10 : USD 5.6662
50 : USD 5.2056
100 : USD 4.6949
500 : USD 4.3408
1000 : USD 4.2503

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 6.885
10 : USD 5.675
100 : USD 4.596
500 : USD 4.02

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FCP099N65S3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCP099N65S3 and other electronic components in the MOSFETs category and beyond.

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FCP099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge V R MAX I MAX DSS DS(ON) D balance technology for outstanding low onresistance and lower gate 650 V 99 m 10 V 30 A charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. D Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features 700 V T = 150C G J Typ. R = 79 m DS(on) Ultra Low Gate Charge (Typ. Q = 61 nC) g S Low Effective Output Capacitance (Typ. C = 544 pF) oss(eff.) POWER MOSFET 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications Telecom / Server Power Supplies G Industrial Power Supplies D S UPS / Solar TO220 CASE 340AT MARKING DIAGRAM Y&Z&3&K FCP 099N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCP099N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 FCP099N65S3/DFCP099N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 30 A D C Continuous (T = 100C) 19 C I Drain Current Pulsed (Note 1) 75 A DM E Single Pulsed Avalanche Energy (Note 2) 145 mJ AS I Avalanche Current (Note 2) 4.4 A AS E Repetitive Avalanche Energy (Note 1) 2.27 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 227 W D C Derate Above 25C 1.82 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 4.4 A, R = 25 , starting T = 25C. AS G J 3. I 15 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.55 C/W JC R Thermal Resistance, Junction to Ambient, Max. 62.5 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCP099N65S3 FCP099N65S3 TO220 Tube N/A N/A 50 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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