STB47N50DM6AG Datasheet Automotive-grade N-channel 500 V, 61 m typ., 38 A MDmesh DM6 Power MOSFET in a DPAK package Features TAB Order code V R max. I DS DS(on) D STB47N50DM6AG 500 V 71 m 38 A 2 3 1 AEC-Q101 qualified DPAK Fast-recovery body diode Lower R per area vs previous generation DS(on) Low gate charge, input capacitance and resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) Product status link available in the market for the most demanding high-efficiency bridge topologies and STB47N50DM6AG ZVS phase-shift converters. Product summary Order code STB47N50DM6AG Marking 47N50DM6 2 Package D PAK Packing Tape and reel DS12118 - Rev 4 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB47N50DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 500 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 38 A D C I Drain current (continuous) at T = 100 C 24 A D C (1) I Drain current (pulsed) 137 A D P Total dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 38 A, di/dt 800 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 3. V 400 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 thj-case C/W (1) R Thermal resistance junction-pcb 30 thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 7 A AR jmax E Single-pulse avalanche energy (starting T = 25C, I = I , V = 100 V) 850 mJ AS j D AR DD DS12118 - Rev 4 page 2/14