STL3N65M2 STMicroelectronics

STL3N65M2 N-channel 650 V, 1.6 typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package Datasheet - production data Features Order code V R max. I DS DS(on) D 1 2 3 STL3N65M2 650 V 1.8 2.3 A 4 8 Extremely low gate charge 5 7 6 6 7 5 Excellent output capacitance (COSS) profile 8 100% avalanche tested Zener-protected PowerFLAT 3.3x3.3 HV Application Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing PowerFLAT Tape and STL3N65M2 3N65M2 3.3x3.3 HV reel April 2016 DocID027894 Rev 3 1/12 www.st.com This is information on a product in full production. Contents STL3N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 Power FLAT 3.3x3.3 HV package information ............................... 9 5 Revision history ............................................................................ 11 2/12 DocID027894 Rev 3